Spacer Oxide 2	- 0.08 µm
Spacer Etch	thickness = 0.09 µm
N-Implant Mask	Photolithography - positive photoresist with thickness of 1 µm
N Implant	- Arsenic - dose = 2x1015 cm-2 - energy = 40 keV - junction depth = 0.1m
Anneal	Diffusion at 8000C for 2min
P Implant	- Boron - dose = 4x1014 cm-2 - energy = 10 keV - depth = 0.13m
Anneal	Diffusion at 7000C for 4min