Process steps
Description

Field Oxidation

 Oxide is grown under the following conditions :
- time = 30 min
- temp. = 1050°C
- wet

Nitride Remove

 Nitride of thickness = 0.32 µm was removed

Shallow Boron Implant

 Boron is implanted at :
- dose = 2x1012 cm-2
- energy = 20 keV

Drive-In Diffusion in N2

 Diffusion is done under the following conditions :
- temp. = 1050°C
- time = 20 min

Deep-In Boron Implant

 Boron is implanted at :
- dose = 2x1012 cm-2
- energy = 60keV

Oxide Mask Remove

 Removal of the oxide mask