Pad-Oxide	120 Å of oxide is grown
Nitride Deposit	3000 Å of nitride is deposited
N-Well Mask	A mask is applied on the epitaxial layer using photolithography.
Etch Nitride & Pad-Oxide	0.35 µm of nitride and 0.012 µm of oxide is etched
Selective Phosphorus Implant	Phosphorus is implanted at : - dose = 1x1013 cm-2 - energy = 80 keV
Drive-In Phosphorus Diffusion	Phosphorus is diffused at : - dose = 2x1017 cm-2 - time = 35 min - temp. = 1100 °C