Process steps
Description

Polysilicon Deposit

 - 2000 Å of polysilicon was deposited

Poly Mask & Poly Gate Etch

 The gate mask was applied on the polysilicon by using photolithography and the polysilicon was etched to produce the gate.

Spacer Oxide 1

 - 60 Å of oxide was grown

N-Implant Mask

 Photolithography
- positive photoresist with thickness of 1 µm

NLDD Implant

 - Phosphorus
- dose = 2x1013 cm-2
- energy = 20 keV
- depth = 950 Å

P-Implant Mask

 Photolithography
- negative photoresist with thickness of 1 µm

PLDD Implant Mask

 - Boron
- dose = 2x1013 cm-2
- energy = 10 keV
- depth = 950 Å