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Field Oxidation |
Using the nitride as a mask, an isolation oxide is grown under the following conditions : - time = 20 min - temperature = 10500 C - wet |
Etch Nitride & Oxide |
All the nitride is etched and 0.02 µm of oxide is etched. |
NMOS Threshold Adjust Mask |
A mask is applied using photolithography for the NMOS Threshold Adjust Implantation. |
Boron Implant |
Boron Implantation is used to adjust the threshold voltage of the N-MOSFET - dose = 3x1010 cm-2 - energy = 15 keV |
NMOS Threshold Mask Remove |
Removal of the photoresist. |
PMOS Threshold Adjust Mask |
A mask is applied using photolithography for the PMOS Threshold Adjust Implantation. |
Phosphorus Implant |
Phosphorus Implantation is used to adjust the threshold voltage of the P-MOSFET - dose = 3x1010cm-2 - energy = 20 keV |
PMOS Threshold Mask Remove |
Removal of the photoresist. |
Gate Oxide Growth |
Oxide was grown under the following conditions : - 70 Å - time = 95 min - temp. = 800 °C - dry |