Light-emitting Resonant Tunneling Diode
Light-emitting resonant tunneling (RT) diodes are not only devices of direct application but also attracting considerable attention on physical research. Unlike the traditional unipolar RT structures which only give current or capacitance characteristics, a p-i-n DBS also show various electroluminesences (ELs) from different layers and different quantum levels. These lines can be identified more easily by comparing with the I-V curve and by inspecting their change with applied biases. More over, direct comparison of the calculated transition energies with the peaks in PL spectrum can be achieved while such kind of comparison is usually more difficult when using an unipolar RT diode. As a result, EL is much more sensitive and powerful for the study of electronic structures, tunneling mechanics (both for electron and for hole), various excitons, etc.
The main consideration of the present work is using an asymmetric p-i-n RT diode of which the incident barrier of holes is thinner than that of electrons. A higher efficiency of EL emitting is then expected since the tunneling of hole is enhanced. The space-indirect recombination, the hot carrier effect due to the hole accumulation, as well as the tunneling mechanics (sequential or coherent) may also be investigated using the device.
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