For the last 2 decades, we have been one of the world leaders in III-V HEMT technology.  Our 50 nm gate length metamorphic GaAs and InP HEMT devices are best in class, offering some of the lowest noise and highest bandwidth performance currently available.

These 50 nm devices are the mainstay of our monolithic integrated circuit technologies which enable our work in both distributed sensor networks (SpeckNet) and mm-wave imaging.

With the commissioning of the Vistek VB6 electron beam lithography tool in the James Watt Nanofabrication Centre, we are now in a position where we can push the minimum feature size below 50 nm.

By working closely with our Nanoelectronics Research Centre colleagues in molecular beam exitaxial growth, physics-based device modelling, and high resolution TEM-based metrology, we are currently aggressively scaling our HEMT technology to 22 nm in the first instance, and thereafter below 20 nm.

Full device scaling of both the gate length and the vertical architecture are required to extend the operating bandwidth into the “terahertz gap” to address future sensing and imaging requirements as well as further power reductions for autonomous distributed sensor network applications.

For further information contact Professor Iain Thayne – ithayne@elec.gla.ac.uk