Quantum Transport

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Our Quantum Transport Simulations  are based on self-consistent solution of Poisson's equation and non-equilibrium Green’s function (NEGF) approach. NEGF formalism is a generalization of the Landauer’s formalism to treat many body systems at room temperature in context of one particle. The electrostatic potential and the electron density, which serve as an initial condition for the Poisson-NEGF cycle, are obtained from a density gradient of Drift-Diffusion equations. The Hamiltonian used in the discretization of the NEGF equations is an effective-mass Hamiltonian that folds the full crystal interaction into the electron effective masses. We can perform calculations in ballistic and scattering regime where in the latter case sources of incoherent scattering such as phonon interaction, are currently included in NEGF module. The Poisson-NEGF cycle is iterated until density and current converges. We developed two methods based on either fully-3D or coupled mode space approach self-consistent methodology to solve electron transport equations. The NEGF module is included in the 'atomistic' simulator Garand.

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People involved is the project

Vihar Georgiev

Talib Al-Ameri

Salim Berrada

Related Publications

Y. Wang, T. Al-Ameri, X. Wang, V. P. Georgiev, E. Towie, S. M. Amoroso, A. R. Brown, B. Cheng, D. Reid, C. Riddet, L. Shifren, S. Sinha, G. Yeric, R. Aitken, X. Liu, J. Kang and A. Asenov, "Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors," IEEE Transactions on Electron Devices, Vol. 62, No. 10, pp. 3229–3236, Oct. 2015.

S. M. Amoroso, V. P. Georgiev, L. Gerrer, E. Towie, X. Wang, C. Riddet, A. R. Brown and A. Asenov, "Inverse Scaling Trends for Charge-Trapping-Induced Degradation of FinFETs Performance," IEEE Trans. Electron Dev. Vol. 61, No. 12, pp. 4014–4018, Oct. 2014.

V. P. Georgiev, E. Towie and A. Asenov, "Impact of Precisely Positioned Dopants on the Performance of an Ultimate Silicon Nanowire Transistor: A Full Three-Dimensional NEGF Simulation Study," IEEE Transactions on Electron Devices, Vol. 60, No. 3, pp. 965–971, Mar. 2013.

V. P. Georgiev, E. Towie and A. Asenov, "Interactions between precisely placed dopants and interface roughness in silicon nanowire transistors: Full 3-D NEGF simulation study," Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on: Glasgow, Sept. 3-5, 2013.

V. P. Georgiev and A. Asenov, Eds., Simulation of a single dopant nanowire transistor, 2013, MRS Spring Meeting, 2013.

A. Martinez, N. Seoane, M. Aldegunde, A. R. Brown and A. Asenov, "The Role of Discrete Dopants in the Statistical Variability of Narrow Gate-All-Around Silicon Nanowire Transistors," IEEE Transactions on Electron Devices, Vol. 58, No. 8, pp. 2209–2217, Aug. 2011.

A. Asenov, A. R. Brown, G. Roy, B. Cheng, C. L. Alexander, C. Riddet, U. Kovac, A. Martinez, N. Seoane and S. Roy, "Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green’s function techniques," Journal of Computational Electronics, Vol. 8, No. 3-4, pp. 349–373, 2009.

A. Martinez, M. Bescond, J. R. Barker, A. Svizhenko, M. P. Anantram, C. Millar and A. Asenov, "A self-consistent full 3-D real-space NEGF simulator for studying nonperturbative effects in nano-MOSFETs," IEEE Transactions on Electron Devices, Vol. 54, No. 9, pp. 2213–2222, 2007.

See the Publications page for more.