The Glasgow 3D Monte Carlo simulator is a generalised device simulator developed in concert with and now available as a module in the with the Glasgow 'atomistic' device simulator, Garand. It has been designed specifically for the investigation of intrinsic statistical device variability where variation in carrier transport, in addition to electrostatic modulation, is an important consideration. It is complimentary to the drift-diffusion module of Garand, working in the same simulation domain and with the same sources of statistical variability.
The general design of the simulator allows the simulation of electron and hole transport within Silicon, Germanium and III-V materials in combination with all relevant sources of statistical variability in a variety of device structures from conventional bulk through to IFQW and FinFET. Scattering is captured through a combination of traditional bulk scattering rate models and directly via the quantum corrected potential that is most accurate for treating position dependent scattering from random dopants and interface roughness that leads to transport variation between microscopically unique devices.
People involved in the project
C. Riddet, C. L. Alexander, A. R. Brown, S. Roy and A. Asenov, "Simulation of "Ab Initio" Quantum Confinement Scattering in UTB MOSFETs Using Three-Dimensional Ensemble Monte Carlo," IEEE Transactions on Electron Devices, Vol. 58, No. 3, pp. 600–608, Mar. 2011.
U. Kovac, C. L. Alexander, G. Roy, C. Riddet, B. Cheng and A. Asenov, "Hierarchical Simulation of Statistical Variability: From 3-D MC with ‘ab initio’ Ionized Impurity Scattering to Statistical Compact Models," IEEE Transactions on Electron Devices, 2010.
A. Asenov, A. R. Brown, G. Roy, B. Cheng, C. L. Alexander, C. Riddet, U. Kovac, A. Martinez, N. Seoane and S. Roy, "Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green’s function techniques," Journal of Computational Electronics, Vol. 8, No. 3-4, pp. 349–373, 2009.
P. Palestri, C. L. Alexander, A. Asenov, V. Aubry-Fortuna, G. Baccarani, A. Bournel, M. Braccioli, B. Cheng, P. Dolfus, A. Esposito, D. Esseni, C. Fenouillet-Beranger, C. Fiegna, G. Fiori, A. Ghetti, G. Iannaccone, A. Martinez, B. Majkusiak, S. Monfray, V. Peikert, S. Reggiani, C. Riddet, J. Saint-Martin, E. Sangiorgi, A. Schenk, L. Selmi, L. Silvestri, P. Toniutti and J. Walczak, "A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs," Solid-State Electronics, Vol. 53, No. 12, pp. 1293–1302, Dec. 2009.
C. L. Alexander, G. Roy and A. Asenov, "Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using "ab initio" Ionized Impurity Scattering," IEEE Trans. Electron Devices, Vol. 55, No. 11, pp. 3251–3258, Nov. 2008.
See the Publications page for more.