Kah H Chan

Area of work

Simulation of an Implant Free Quantum Well pMOSFET

IFQW p-MOSFET

Motivation

The use of high mobility channel materials such as Germanium can increase the pMOSFET drive current due to lower effective mass and higher injection velocity, thus improving the switching speed of CMOS. To take full advantage of these benefits, the selection of suitable device architecture is vital.

Simulation Techniques

An implant free quantum well design (pIFQW) is introduced here. It offers improved electrostatic integrity, in-situ doped source and drain regions and simplified technology. Investigations are being carried out using commercial CAD tool - TCAD sentaurus and in-house Monte Carlo (MC) simulator.

The MC transport simulations used in this study employ a 6-band k.p full-band structure including degenerate statistic and quantum corrections through the use of the density gradient formalism. Scattering from ionized impurities has been treated with care, including phase-shift and multi-ion corrections, along with Lindhard dynamic screening, in order to accurately model the carrier injection velocities from the highly-doped S/D regions. Optical and acoustic phonons have been taken into account and calibrated against the experimental velocity-field characteristics for relaxed, bulk Ge demonstrating agreement at 220K and 300K using a single set of phonon parameters.

Investigation

So far, investigations on spacer width, spacer angle, density interface state, parasitic capacitance (intrinsic & extrinsic), orientations and scaling have been carried out extensively. CMOS circuit simulations and variability study will be conducted in the near future.

Recent grants worked on

2008 -

Ge Renaissance (EPSRC, Ph.D)

The use of high mobility channel materials such as Germanium can increase the pMOSFET drive current, thus improving the switching speed of CMOS. This study, making use of commerical CAD tool TCAD sentaurus and in-house Monte Carlo simulator, will provide an insight into the impact of new device architecture, orientation and strain upon a Ge-based pMOSFET device.
2006 - 2008

Microprocessor Failure Analysis Engineer

- Intel Microelectronics Sdn. Bhd. Worked on test software verifications / validations, defect analysis for 2-core/4-core/6-core products using Infrared technology and CMT platform.

Publications

2012

  • C. Riddet, J. R. Watling, K. Chan, E. H. C. Parker, T. E. Whall, D. R. Leadley and A. Asenov, "Hole Mobility in Germanium as a Function of Substrate and Channel Orientation, Strain, Doping, and Temperature," IEEE Transactions on Electron Devices, Vol. 59, No. 7, pp. 1878–1884, July 2012.

2011

  • B. Benbakhti, K. Chan, E. Towie, K. Kalna, C. Riddet, X. Wang, G. Eneman, G. Hellings, K. De Meyer, M. Meuris and A. Asenov, "Numerical analysis of the new Implant-Free Quantum-Well CMOS: DualLogic approach," Solid-State Electronics, Vol. 63, No. 1, pp. 14–18, Sept. 2011.
  • K. Chan, C. Riddet, J. R. Watling and A. Asenov, "Monte Carlo Simulation of a 20nm Gate Length Implant Free Quantum Well Ge p-MOSFET with different Lateral Spacer Width," 12th Ultimate Integration on Silicon: Cork, Ireland, Mar. 14-16, 2011.
  • C. Riddet, K. Chan and A. Asenov, "Monte Carlo study of the impact of strain and orientation on hole transport in germanium and silicon," UK Semiconductors: July 6-7, 2011.
  • C. Riddet, K. Chan and A. Asenov, "Full-band Monte Carlo Simulations of Hole Transport in Germanium: from bulk material to devices," 17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures: Aug. 7-12, 2011.
  • E. Towie, K. Chan, B. Benbakhti, C. Riddet and A. Asenov, "Statistical Variability in Implant-Free Quantum-Well MOSFETs with InGaAs and Ge: A comparative 3D simulation study," Intel European Research and Innovation Conference: Oct. 12-14, 2011.
  • E. Towie, K. Chan, C. Riddet and A. Asenov, "High Mobility Channel MOSFETs for CMOS: A Comparative Implant-Free Quantum-Well 3D Statistical Variability Study," European Workshop on Heterostructure Technology: Nov. 7-9, 2011.

2010

  • B. Benbakhti, K. Kalna, K. Chan, G. Hellings, G. Eneman, K. De Meyer, M. Meuris and A. Asenov, "Design and Analysis of a New In53Ga47As Implant-Free Quantum-Well Device Structure," European Materials Research Society: Strasbourg, France, June 7-11, 2010.
  • K. Chan, B. Benbakhti, C. Riddet, J. R. Watling and A. Asenov, "Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET," Microelectronic Engineering, Vol. 88, No. 4, pp. 362–365, Oct. 2010.
  • K. Chan, B. Benbakhti, C. Riddet, J. R. Watling and A. Asenov, "Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET," European Materials Research Society: Strabourg, France, June 7-11, 2010.
  • C. Riddet, J. R. Watling, K. Chan and A. Asenov, "Monte Carlo simulation study of the impact of strain and substrate orientation on hole mobility in Germanium," in Proc. 2nd Workshop on Theory, Modelling and Computational Methods for Semiconductor Materials and Nanostructures, York, UK, Jan. 13-15, 2010, p. 17.
  • C. Riddet, J. R. Watling, K. Chan and A. Asenov, "Monte Carlo simulation study of the impact of strain and substrate orientation on hole mobility in Germanium," Journal of Physics Conferences Series, Vol. 242, p. 012017, 2010.
  • C. Riddet, J. R. Watling, K. Chan, A. Asenov, B. De Jaeger, J. Mitard and M. Meuris, "Monte Carlo Simulation Study of Hole Mobility in Germanium MOS Inversion Layers," in Proc. 14th International Workshop on Computational Electronics (IWCE), Oct. 27-29, 2010, pp. 239–242.