Jeremy Watling

I obtained a BSc Joint Hons (First Class) in Mathematics and Physics in 1994 from the School of Physics at the University of East Anglia (UEA). Remained in the School of Physics for PhD studies completed in 1998 with a thesis entitled 'Carrier Transport in Quantum Well Structures'. My PhD studies concentrated on simulation of carrier loss in quantum well lasers due to Auger recombination, and electron transport in delta-doped GaAs/AlGaAs and InGaAs/InAlAs quantum wells (lattice matched and strained).

In order to maintain my interests in the modelling of carrier transport in nanoscale semiconductor devices, addressing both physics and engineering questions. I moved across the border to the University of Glasgow, joining the device modelling group in Department of Electronics and Electrical Engineering. Here I have worked on many projects the most recent of which is the study of strain in nano-scale devices. 

I have been investigator or co-investigator on grants from EPSRC, SEMATECH and the EU. I have been principal investigator on two grants:

EPSRC Advanced Research Fellowship:  'The Impact of Interface Roughness and Self-Heating on the Performance of Nano-Scale MOSFETs

International SEMATECH: 'Modelling the Impact of high-k gate stacks on mobility device performance and intrinsic parameter fluctuations'

Recent grants worked on

2010 -

My current project

My current project is in the area of studying the strain distribution in nanoscale semiconductor both III-V and Si. As devices reach the nano-scale, the strain distribution within devices can significantly their behaviour due to intrinsic strain as in III-V devices, due to fluctuations in the alloy composition, or for example in Si FinFETs due to the introduction of Contact Etch Stoppers around the fin-extensions in the source and drain regions 
2008 - 2010

My previous projects

Recent previous projects were:

Research in the area of Thermo-Electric Devices. Responsible for designing and modelling of nano–scale multiple quantum well devices suitable for Thermo-Electric Energy Harvesting.   EC Grant: Generate Renewable Energy Efficiently using Nanofabricated Silicon (Green Silicon)


Research in the area of advanced physical modelling of Ge devices: EC Grant:  DUALLOGIC

 

 

Publications

2012

  • K. H. Chan, C. Riddet, J. R. Watling and A. Asenov, "Monte Carlo Simulations of Ge Implant Free Quantum Well FETs - The Role of Substrate and Channel Orientation," 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM): June 4-6, 2012.
  • C. Riddet, J. R. Watling, K. Chan, E. H. C. Parker, T. E. Whall, D. R. Leadley and A. Asenov, "Hole Mobility in Germanium as a Function of Substrate and Channel Orientation, Strain, Doping, and Temperature," IEEE Transactions on Electron Devices, Vol. 59, No. 7, pp. 1878–1884, July 2012.
  • J. R. Watling, C. Riddet and A. Asenov, "Accurate and efficient modelling of inelastic hole-acoustic phonon scattering in Monte Carlo simulations," 15th International Workshop on Computational Electronics (IWCE): May 22-25, 2012.

2011

  • K. Chan, C. Riddet, J. R. Watling and A. Asenov, "Monte Carlo Simulation of a 20nm Gate Length Implant Free Quantum Well Ge p-MOSFET with different Lateral Spacer Width," 12th Ultimate Integration on Silicon: Cork, Ireland, Mar. 14-16, 2011.
  • E. Towie, J. R. Watling and J. R. Barker, "Remotely screened electron-impurity scattering model for nanoscale MOSFETs," Semiconductor Science and Technology, Vol. 26, No. 5, p. 055008, May 2011.
  • J. R. Watling, C. Riddet, KH. Chan and A. Asenov, "Simulation of hole-mobility in doped relaxed and strained Ge," Microelectronic Engineering, Vol. 88, No. 4, pp. 462–464, Apr. 2011.
  • J. R. Watling and D. Paul, "A study of the impact of dislocation scattering on the thermoelectric properties of quantum wells in the Si/SiGe materials system," Journal of Applied Physics, Vol. 110, p. 114508, 2011.

2010

  • A. R. Brown, N. M. Idris, J. R. Watling and A. Asenov, "Impact of Metal Gate Granularity on Threshold Voltage Variability: A Full-Scale Three-Dimensional Statistical Simulation Study," IEEE Electron Device Letters, Vol. 31, No. 11, pp. 1199–1201, Nov. 2010.
  • A. R. Brown, J. R. Watling, G. Roy, C. Riddet, C. L. Alexander, U. Kovac, A. Martinez and A. Asenov, "Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs," Journal of Computational Electronics, Vol. 9, No. 3-4, pp. 187–196, 2010.
  • K. Chan, B. Benbakhti, C. Riddet, J. R. Watling and A. Asenov, "Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET," Microelectronic Engineering, Vol. 88, No. 4, pp. 362–365, Oct. 2010.
  • K. Chan, B. Benbakhti, C. Riddet, J. R. Watling and A. Asenov, "Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET," European Materials Research Society: Strabourg, France, June 7-11, 2010.
  • N. M. Idris, A. R. Brown, J. R. Watling and A. Asenov, "Simulation Study of Workfunction Variability in MOSFETs with Polycrystalline Metal Gates," in Proc. Ultimate Integration on Silicon, Glasgow, Scotland, Mar. 18-19, 2010, pp. 165–168.
  • C. Riddet, J. R. Watling, K. Chan and A. Asenov, "Monte Carlo simulation study of the impact of strain and substrate orientation on hole mobility in Germanium," in Proc. 2nd Workshop on Theory, Modelling and Computational Methods for Semiconductor Materials and Nanostructures, York, UK, Jan. 13-15, 2010, p. 17.
  • C. Riddet, J. R. Watling, K. Chan and A. Asenov, "Monte Carlo simulation study of the impact of strain and substrate orientation on hole mobility in Germanium," Journal of Physics Conferences Series, Vol. 242, p. 012017, 2010.
  • C. Riddet, J. R. Watling, K. Chan, A. Asenov, B. De Jaeger, J. Mitard and M. Meuris, "Monte Carlo Simulation Study of Hole Mobility in Germanium MOS Inversion Layers," in Proc. 14th International Workshop on Computational Electronics (IWCE), Oct. 27-29, 2010, pp. 239–242.
  • J. R. Watling, C. Riddet, KH. Chan and A. Asenov, "Simulation of hole-mobility in doped relaxed and strained Ge layers," Journal of Applied Physics, Vol. 108, p. 093715, 2010.

2008

  • J. R. Barker, E. Towie and J. R. Watling, Eds., The influence of polarisation and image charges on electron- impurity scattering in high degeneracy, nanometre scale silicon wrap-round gate MOSFETs, 2008, International Symposium on Advanced Nanodevices and Nanotechnology, Waikoloa, Hawaii, USA, Dec. 2-7, 2007.
  • J. R. Barker, E. Towie and J. R. Watling, "The influence of polarisation and image charges on Electron-Impurity Scattering in High Degeneracy, Nanometre Scale Silicon wrap-round gate MOSFETs," Journal of Physics Conferences Series, Vol. 109, p. 012009, 2008.

2007

  • J. R. Barker, E. Towie and J. R. Watling, "Inhomogeneous Electron-Impurity Scattering in High Degeneracy, nanometer Scale Silicon MOSFETs including image charge effects: new models," 12th International Workshop on Computational Electronics: Oct. 8-10, 2007.
  • J. R. Barker, E. Towie and J. R. Watling, Eds., The influence of polarisation and image charges on electron- impurity scattering in high degeneracy, nanometre scale silicon wrap-round gate MOSFETs, 2008, International Symposium on Advanced Nanodevices and Nanotechnology, Waikoloa, Hawaii, USA, Dec. 2-7, 2007.
  • G. Ferrari, J. R. Watling, S. Roy, J. R. Barker, P. Zeitzoff, G. Bersuker and A. Asenov, "On the Impact of High-k Gate Stacks on Mobility: A Monte Carlo Study Including Coupled SO Phonon-plasmon Scattering," J. Computational Electronics, 2007.
  • G. Ferrari, J. R. Watling, S. Roy, J. R. Barker and A. Asenov, "Beyond SiO2 technology: Simulation of the impact of high-kappa dielectrics on mobility," Journal of Non-Crystalline Solids, Vol. 353, No. 5-7, pp. 630–634, 2007.
  • C. Riddet, A. R. Brown, C. L. Alexander, J. R. Watling, S. Roy and A. Asenov, "3-D Monte Carlo simulation of the impact of quantum confinement scattering on the magnitude of current fluctuations in double gate MOSFETs," IEEE Transactions on Nanotechnology, Vol. 6, No. 1, pp. 48–55, 2007.
  • E. Towie, J. R. Barker and J. R. Watling, "Inhomogeneous Electron-Impurity Scattering in High Degeneracy, Nanometre Scale Silicon MOSFETs," Condensed Matter and Materials Physics 2007: University of Leicester, UK, Apr. 12-13, 2007.

2006

  • A. Asenov, A. R. Brown, B. Cheng, J. R. Watling, G. Roy and C. L. Alexander, "Simulation of nano-CMOS devices: from atoms to architecture," in Nanotechnology for Electronic Materials and Devices, A. Korkin, J. Labanowski, E. Gusev and S. Luryi, Eds. New York: Springer, 2006, pp. 257–303.
  • J. R. Barker and J. R. Watling, "Model plasma dispersion functions for SO phonon scattering in Monte Carlo simulations of high-k dielectric MOSFETs," ser. 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria, pp. 99–100.
  • J. R. Barker and J. R. Watling, "Non-equilibrium dielectric response of high-k gate stacks in Si MOSFETs: application to SO interface phonon scattering," Journal of Physics Conferences Series, Vol. 38, pp. 255–268, 2006.
  • J. R. Barker and J. R. Watling, "Atomistic scattering close to an interface," Journal of Physics Conferences Series, Vol. 38, pp. 204–207, 2006.
  • J. R. Barker, J. R. Watling and G. Ferrari, "SO phonon scattering rates at the Si-HFO2 interface in Si MOSFETs," Journal of Physics Conferences Series, Vol. 38, pp. 184–187, 2006.
  • A. R. Brown, J. R. Watling and A. Asenov, "Intrinsic Parameter Fluctuations due to Random Grain Orientations in High-k Gate Stacks," J. Computational Electronics, Vol. 5, pp. 333–336, 2006.
  • A. R. Brown, J. R. Watling and A. Asenov, "Intrinsic Parameter Fluctuations due to Random Grain Orientations in High-k Gate Stacks," in Proc. Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE), Vienna, Austria, May 25-27, 2006, pp. 49–50.
  • G. Ferrari, J. R. Watling, S. Roy, J. R. Barker and A. Asenov, "Beyond SiO2 technology: The impact of high-k dielectrics," ser. 6 th symposium SiO 2 , advanced dielectrics and related devices : SiO2006,
  • G. Ferrari, J. R. Watling, S. Roy, J. R. Barker, P. Zeitzoff, G. Bersuker and A. Asenov, "Monte Carlo study of mobility in Si devices with HfO2 based oxides," ser. E-MRS IUMRS ICEM 2006, Nice, France, p. i.
  • G. Ferrari, J. R. Watling, S. Roy, J. R. Barker, P. Zeitzoff, G. Bersuker and A. Asenov, "On the impact of high-k gate stacks on mobility: a Monte Carlo study including coupled SO phonon-plasmon scattering," ser. 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria, p. 111.
  • G. Ferrari, J. R. Watling, S. Roy, J. R. Barker, P. Zeitzoff, G. Bersuker and A. Asenov, "Monte Carlo study of mobility in Si devices with HfO2-based oxides," Materials Science in Semiconductor Processing, Vol. 9, No. 6, pp. 995–999, 2006.

2005

  • C. L. Alexander, A. R. Brown, J. R. Watling and A. Asenov, "Impact of single charge trapping in nano-MOSFETs - Electrostatics versus transport effects," IEEE Transactions on Nanotechnology, Vol. 4, No. 3, pp. 339–344, 2005.
  • C. L. Alexander, A. R. Brown, J. R. Watling and A. Asenov, "Impact of scattering in 'atomistic' device simulations," Solid-State Electronics, Vol. 49, No. 5, pp. 733–739, 2005.
  • J. R. Barker and J. R. Watling, "Non-equlibrium dielectric response of high-k stacks in Si MOSFETs: application to SO interface phonon scattering," ser. 3rd International Workshop on Progress in non-equilibrium Green functions,
  • J. R. Barker and J. R. Watling, "Atomistic scattering close to an interface," ser. Conference on New Phenomena in Mesoscopic Strucutres, Surfaces and Interfaces in Mesoscopic Devices NPMS-SIMD-5,
  • J. R. Barker, J. R. Watling and G. Ferrari, "SO phonon scattering rates at the Si-HfO2 interface in Si MOSFETs," ser. Conference on New Phenomena in Mesoscopic Strucutres, Surfaces and Interfaces in Mesoscopic Devices NPMS-SIMD-5,
  • J. R. Barker, J. R. Watling, A. R. Brown, S. Roy, P. Zeitzoff, G. Bersuker and A. Asenov, "Monte Carlo study of couples SO phonon-plasmon scattering in Si MOSFETs with high-k dielectric gate stacks: hot electron and disorder effects," in Proc. 14th International Conference on Hot Carriers in Semiconductors (HCIS14), July p. TU 4–2.
  • A. R. Brown, J. R. Watling, A. Asenov, G. Bersuker and P. Zeitzoff, "Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-k gate stack materials," in Proc. 2005 International Conference on Simulation of Semiconductor Processes and Devices, Tokyo, Japan, Sept. 1-3, 2005, pp. 27–30.
  • C. Riddet, A. R. Brown, C. L. Alexander, J. R. Watling, S. Roy and A. Asenov, "Impact of quantum confinement scattering on the magnitude of current fluctuations in double gate MOSFETs," ser. Silicon Nanoelectronics Workshop 2005,
  • J. R. Watling, L. Yang, A. Asenov, J. R. Barker and S. Roy, "Impact of high-k dielectric HfO2 on the mobility and device performance of sub-100-nm nMOSFETs," IEEE Transactions on Device and Materials Reliability, Vol. 5, No. 1, pp. 103–108, 2005.
  • J. R. Watling, A. R. Brown, C. L. Alexander, G. Ferrari, J. R. Barker, G. Bersuker, P. Zeitzoff and A. Asenov, "Electrostatic and transport variations in nano CMOS devices due to variations in high-k oxides," ser. 2nd International Workshop on Advanced Gate Stack Technology, Texas, USA,
  • J. R. Watling, A. Asenov, J. R. Barker and S. Roy, "The impact of the interfacial layer and structure of the k dielectric (HfO2) on device performance," ser. Advanced Gate Stack Engineering Conference,
  • J. R. Watling, A. Asenov, J. R. Barker and S. Roy, "Transport in the presence of high-k dielectrics," ser. Material Modelling International Workshop,
  • L. Yang, J. R. Watling, J. R. Barker and A. Asenov, "The impact of soft-optical phonon scattering due to high-kappa dielectrics on the performance of sub-100nm conventional and strained Si n-MOSFETs," ser. PHYSICS OF SEMICONDUCTORS Aip conference proceedings, MELVILLE, pp. 1497–1498.
  • L. Yang, J. R. Watling, F. Adamu-Lema and A. Asenov, "Simulations of Sub-100 nm Strained Si MOSFETs with High-k Gate Stacks," Computational Electronics, Vol. 3, pp. 171–176, 2005.

2004

  • C. L. Alexander, J. R. Watling and A. Asenov, "Numerical carrier heating when implementing (PM)-M-3 to study small volume variations," Semiconductor Science and Technology, Vol. 19, No. 4, p. S139–S141, 2004.
  • C. L. Alexander, A. R. Brown, J. R. Watling and A. Asenov, "Impact of scattering on random dopant induced current fluctuations in decanano MOSFETs," in Proc. SISPAD, ser. Simulation of Semiconductor Processes and Devices, pp. 223–226.
  • C. L. Alexander, A. R. Brown, J. R. Watling and A. Asenov, "Impact scattering in 'atomistic' device simulation," in Proc. Ultimate Intigration of Silicon, ser. 5th European Workshop on Ultimate Integration of Silicon - ULIS04,
  • C. L. Alexander, A. R. Brown, J. R. Watling and A. Asenov, "Impact of single charge trapping in nano-MOSFETs," in Proc. Silicon Nanoelectronics Workshop, ser. IEEE 2004 Silicon Nanoelectronics Workshop, Honolulu,
  • C. L. Alexander, J. R. Watling and A. Asenov, "Small volume mobility variations due to lonised impurity scattering," Semiconductor Science and Technology, Vol. 10S, pp. 139–141, 2004.
  • C. L. Alexander, A. R. Brown, J. R. Watling and A. Asenov, "Impact of scattering in 'atomistic' device simulation," in Proc. Proc. ULIS 2004, Leuven Belgium, pp. 89–92.
  • A. Asenov, G. Roy, C. L. Alexander, A. R. Brown, J. R. Watling and S. Roy, "Quantum mechanical and transport aspects of resolving discrete charges in nano-CMOS device simulation," in Proc. 4th IEEE Conference on Nanotechnology (IEEE Nano), Munich, Germany, Aug. 17-19, 2004, pp. 334–336.
  • M. Boriçi, J. R. Watling, R. C. W. Wilkins, L. Yang, J. R. Barker and A. Asenov, "Interface roughness scattering and its impact on electron transport in relaxed and strained Si n-MOSFETs," Semiconductor Science and Technology, Vol. 19S, No. 4, pp. 155–157, 2004.
  • K. Kalna, L. Yang, J. R. Watling and A. Asenov, "80nm InGaAs MOSFET compared to equivalent Si transistor," ser. 5th European Workshop on Ultimate Integration of Silicon - ULIS04, pp. 159–162.
  • C. Riddet, A. R. Brown, C. L. Alexander, J. R. Watling, S. Roy and A. Asenov, "Scattering from body thickness fluctuations in double gate MOSFETs. An ab initio Monte Carlo simulation study," ser. International workshop on Computational Electronics, IWCE-10, West Lafayette, USA, pp. 194–195.
  • C. Riddet, A. R. Brown, C. L. Alexander, J. R. Watling, S. Roy and A. Asenov, "Scattering From Body Thickness Fluctuations in Double Gate MOSFETs. An ab initio Monte Carlo Study." J. Comp. Elec, Vol. 3, pp. 341–345, 2004.
  • J. R. Watling, L. Yang, M. Boriçi, R. C. W. Wilkins, A. Asenov, J. R. Barker and S. Roy, "The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs," Solid-State Electronics, Vol. 48, No. 8, pp. 1337–1346, 2004.
  • J. R. Watling, L. Yang, J. R. Barker and A. Asenov, "The impact of high- k dielectrics on the future performance of nano-scale MOSFETs," ser. IoP Condensed Matter and Materials Physics Conference CMMP04, Warwick, UK,
  • J. R. Watling, L. Yang, A. Asenov, J. R. Barker and S. Roy, "Impact of high- k dielectric HfO2 on the mobility and device performance of sub-100nm n-MOSFETs," ser. International workshop on electrical characterization and reliability of high- k devices, Austin, USA,
  • L. Yang, A. Asenov, J. R. Watling, M. Boriçi, J. R. Barker, S. Roy, K. Elgaid, I. G. Thayne and T. Hackbarth, "Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs," Microelectronics Reliability, Vol. 44, No. 7, pp. 1101–1107, 2004.
  • L. Yang, J. R. Watling, A. Asenov and J. R. Barker, "Performance degradation due to soft optical phonon scattering in conventional and strained Si MOSFETs with high-k gate dielectrics," ser. 34th European Solid-State Device research Conference, ESSDERC,
  • L. Yang, J. R. Watling, A. Asenov, J. R. Barker and S. Roy, "Mobility and device performance in conventional and strained Si MOSFETs with high-k stack," ser. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 199–202.
  • L. Yang, J. R. Watling, R. C. W. Wilkins, J. R. Barker and A. Asenov, "Reduced interface roughness in sub-100nm strained Si n-MOSFETs - A Monte Carlo simulation study," ser. 5th European Workshop on Ultimate Integration of Silicon - ULIS04, pp. 23–26.
  • L. Yang, J. R. Watling, R. C. W. Wilkins, J. R. Barker and A. Asenov, "Monte-Carlo investigation of interface roughness scattering in relaxed and strained Si n-MOSFETs," ser. Condensed Matter and Materials Physcis Conference - CMMP04, Warwick, UK,
  • L. Yang, J. R. Watling, F. Adamu-Lema, A. Asenov and J. R. Barker, "Simulations of sub-100nm strained Si MOSFETs with high k gate stacks," ser. International workshop on Computational Electronics, IWCE-10, West Lafeyette, USA,
  • L. Yang, J. R. Watling, A. Asenov, J. R. Barker and S. Roy, "Sub-100nm strained Si CMOS: Device performance and circuit behavior," ser. 7th International Conference on Solid State and Intergrated Circuit Technology,
  • L. Yang, J. R. Watling, R. C. W. Wilkins, M. Boriçi, J. R. Barker, A. Asenov and S. Roy, "Si/SiGe heterostructure parameters for device simulations," Semiconductor Science and Technology, Vol. 19, No. 10, pp. 1174–1182, 2004.
  • L. Yang, J. R. Watling, J. R. Barker and A. Asenov, "The impact of soft-optical phonon scattering due to high-κ dielectrics on the performance of sub-100nm conventional and strained Si n-MOSFETs," in Proc. 27th International Conference on Physics of Semiconductors (ICPS04), July.
  • L. Yang, J. R. Watling, F. Adamu-Lema, A. Asenov and J. R. Barker, "Scaling study of Si and strained Si n-MOSFETs with different high-k gate stacks," in Proc. 2004 International Electron Device Meeting (IEDM), Dec.
  • L. Yang, J. R. Watling, A. Asenov, J. R. Barker and S. Roy, "Device performance in conventional and strained Si MOSFETs with high-κ gate stack," in Proc. IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sept.

2003

  • C. L. Alexander, J. R. Watling and A. Asenov, "Artificial carrier heating due to the introduction of ab-initio Coulomb scattering in Monte Carlo simulations," in Proc. Sixth International Conference on New Phenomena in Mesoscopic Systems, and Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices (NPMS-6/SIMD-4),
  • C. L. Alexander, J. R. Watling and A. Asenov, "Small volume mobility variations due to ionised impurity scattering," in Proc. Internation Conference on Nonequilibrium Dynamics in Semiconductors, ser. 13th International Conference on Nonequilibrium Carrier Dynamics - HCIS 13,
  • C. L. Alexander, J. R. Watling and A. Asenov, "Mobility variations in ultra-small devices due to discrete charges." J. Computational Electronics, Vol. 2, pp. 285–289, 2003.
  • C. L. Alexander, A. R. Brown, J. R. Watling and A. Asenov, "Artificial carrier heating due to the introduction of ab-initio Coulomb scattering in Monte Carlo simulations." Superlattices and Microstructures, Vol. 34, No. 3-6, pp. 319–326, 2003.
  • C. L. Alexander, J. R. Watling and A. Asenov, "Mobility variations in ultra-small devices due to discrete charges," in Proc. Extended Abstracts IWCE-9, Rome 2003,
  • A. Asenov, A. R. Brown and J. R. Watling, "Quantum corrections in the simulation of decanano MOSFETs," Solid-State Electronics, Vol. 47, No. 7, pp. 1141–1145, 2003.
  • A. Asenov, J. R. Watling, A. R. Brown and D. K. Ferry, "The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices," J. Computational Electronics, Vol. 1, pp. 503–513, 2003.
  • M. Boriçi, J. R. Watling, R. C. W. Wilkins, L. Yang and J. R. Barker, "A non pertubative model of surface roughness scattering for Monte Carlo simulation of relaxed silicon n-MOSFETs," Journal of Computational Electronics, Vol. 2, pp. 163–167, 2003.
  • M. Boriçi, J. R. Watling, R. C. W. Wilkins and J. R. Barker, "Interface roughness scattering and its impact on electrons transport in relaxed and strained Si- n-MOSFETs," ser. 13th International Conference on Nonequilibrium Carrier Dynamics - HCIS 13,
  • J. R. Watling, L. Yang, M. Boriçi and J. R. Barker, "Degeneracy and high doping effects in deep sub-micron relaxed and strained SiGe MOSFETs," ser. International Workshop on Computational Electronics - IWCE 9,
  • J. R. Watling, L. Yang, M. Boriçi, J. R. Barker and A. Asenov, "Degeneracy and high doping effects in deep sub-micron relaxed and strained SiGe MOSFETs," Journal of Computational Electronics, Vol. 2, pp. 475–479, 2003.
  • J. R. Watling, A. Asenov, A. R. Brown, A. Svizhenko and M. P. Anantram, "Direct Source-to-Drain Tunnelling and its Impact on the Intrinsic Parameter Fluctuations in nanometre scale Double Gate MOSFETs," in Proc. Proc. Modeling and Simulation of Microsystems (MSM03), p. 202.
  • L. Yang, J. R. Watling, M. Boriçi, R. C. W. Wilkins, A. Asenov, J. R. Barker and S. Roy, "Simulations of scaled sub-100nm strained Si/SiGe p-channel MOSFETs," Journal of Computational Electronics, Vol. 2, pp. 363–368, 2003.
  • L. Yang, A. Asenov, J. R. Watling, M. Boriçi, J. R. Barker, S. Roy, K. Elgaid, I. G. Thayne and T. Hackbarth, "Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications," ser. 14th Workshop on Modeling and Simulation of Electron Devices, pp. 41–44.
  • L. Yang, A. Asenov, J. R. Watling, M. Boriçi, J. R. Barker, S. Roy, K. Elgaid, I. G. Thayne and T. Hackbarth, "Optimizations of sub-100nm Si/SiGe MODFETs for high linearity RF applications," in Proc. Proceedings of the 2003 IEEE Conference on Electron Device and Solid-State Circuits (EDSSC03), Dec. pp. 331–334.
  • L. Yang, J. R. Watling, M. Boriçi, R. C. W. Wilkins, A. Asenov, J. R. Barker and S. Roy, "Simulations of scaled sub-100nm strained Si/SiGe p-channel MOSFETs," in Proc. 9th IEEE International Workshop of Computational Electronics (IWCE),
  • L. Yang, A. Asenov, J. R. Watling, M. Boriçi, J. R. Barker, S. Roy, K. Elgaid, I. G. Thayne and T. Hackbarth, "A simulation study of high linearity Si/SiGe HFETs," in Proc. Proceedings of the 14th Workshop on Modelling and Simulation of Electron Device (MSED03), Oct. pp. 41–44.

2002

  • A. Asenov, A. R. Brown and J. R. Watling, "Quantum corrections in the simulation of decanano MOSFETs," in Proc. 3rd European Workshop on Ultimate Integration of Silicon (ULIS), Munich, Germany, 2002,
  • A. Asenov, A. R. Brown and J. R. Watling, "The Use of Quantum Potentials for Confinement in Semiconductor Devices," in Proc. 5th International Conference on Modeling and Simulation of Microsystems (MSM), Puerto Rico, Apr. 20-25, 2002,
  • J. R. Barker and J. R. Watling, "Traversal times and charge confinement for spatially dependent effective masses within semiconductor heterostructures: the quantum potential approach," Microelectronic Engineering, Vol. 63, No. 1-3, pp. 97–103, 2002.
  • A. R. Brown, J. R. Watling and A. Asenov, "A 3-D atomistic study of archetypal double gate MOSFET structures," Journal of Computational Electronics, Vol. 1, pp. 165–169, 2002.
  • A. R. Brown, A. Asenov and J. R. Watling, "Intrinsic Fluctuations in Sub 10 nm Double-Gate MOSFETs Introduced by Discreteness of Charge and Matter," IEEE Trans. Nanotechnology, Vol. 1, pp. 195–200, 2002.
  • A. R. Brown, A. Asenov and J. R. Watling, "Intrinsic Fluctuations in Sub 10 nm Double-Gate MOSFETs Introduced by Discreteness of Charge and Matter," in Proc. Silicon Nanoelectronics Workshop, Honolulu, HI, USA, June 9-10, 2002,
  • C. Millar, A. Asenov and J. R. Watling, "Excessive Over-Relaxation Method For Multigrid Poisson Solvers," J. Computational Electronics, Vol. 1, No. 3, pp. 341–345, 2002.
  • M. J. Prest, M. J. Palmer, T. J. Grasby, P. J. Phillips, O. A. Mironov, E. H. C. Parker, T. E. Whall, A. M. Waite, A. G. R. Evans, J. R. Watling, A. Asenov and J. R. Barker, "Transconductance, carrier mobility and 1/f noise in Si/Si/sub 0.64/Ge/sub 0.36//Si pMOSFETs," Materials Science & Engineering B Solid.State.Materials for.Advanced.Technology, Vol. B89, pp. 1–3, 2002.
  • J. R. Watling, A. R. Brown and A. Asenov, "Can the density gradient approach describe the source-drain tunnelling in decanano double-gate MOSFETs?" J. Computational Electronics, Vol. 1, pp. 289–293, 2002.
  • J. R. Watling, A. R. Brown, A. Asenov, A. Svizhenko and M. P. Anantram, "Simulation of Direct Source-to-Drain Tunnelling Using the Density Gradient Formalism: Non-equilibrium Green's Function Calibration," in Proc. Proc. SISPAD 2002, IEEE Cat. no. 02TH8621, pp. 267–270.
  • L. Yang, J. R. Watling, R. C. W. Wilkins, A. Asenov, J. R. Barker, S. Roy and T. Hackbarth, "Scaling study of Si/SiGe MOSFETs for RF applications," ser. 10th International Symposium on Electron Devices for Microwave and Optoelectronic Devices ( EDMO 2002), Manchester, UK, pp. 101–106.

2001

  • J. R. Barker, J. R. Watling and R. C. W. Wilkins, "A fast algorithm for the study of wave-packet scattering at disordered interfaces," VLSI Design, Vol. 13, p. 199, 2001.
  • J. R. Barker and J. R. Watling, "Simulation of enhanced interface trapping due to carrier dynamics in warped valence bands in SiGe devices," VLSI Design, Vol. 13, pp. 453–458, 2001.
  • A. R. Brown, J. R. Watling and A. Asenov, "A 3-D atomistic study of archetypal double gate MOSFET structures," in Proc. 8th International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA, Oct. 15-17, 2001,
  • M. J. Palmer, G. Braithwaite, T. J. Grasby, P. J. Phillips, M. J. Prest, E. H. C. Parker, T. E. Whall, C. P. Parry, A. M. Waite, A. G. R. Evans, S. Roy, J. R. Watling, S. Kaya and A. Asenov, "Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers," Applied.Physics.Letters. Vol. vol.78, No. 10, pp. 1424–1426, 2001.
  • M. J. Palmer, G. Braithwaite, M. J. Prest, E. H. C. Parker, T. E. Whall, S. Zhao, S. Kaya, J. R. Watling, A. Asenov, J. R. Barker, A. M. Waite and A. G. R. Evans, "Enhanced velocity overshoot and transconductance in Si/SiGe/Si pMOSFETs- Prediction for deep submicron devices," ser. Proceeding ESSDERC 2001 - Edition Frontiers, pp. 199–202.
  • U. N. Straube, A. G. R. Evans, G. Braithwaite, S. Kaya, J. R. Watling and A. Asenov, "On the mobility extraction for HMOSFETs," Solid.State.Electronics. Vol. vol.45, No. 3, pp. 527–529, 2001.
  • J. R. Watling, A. R. Brown, A. Asenov and D. K. Ferry, "Quantum corrections in 3-D drift diffusion simulation of decanano MOSFETs using an effective potential," ser. Simulation of semiconductor processes and devices, Vienna, pp. 81–85.
  • J. R. Watling, J. R. Barker and A. Asenov, "Soft sphere model for electron correlation and scattering in the atomistic modelling of semiconductor devices," VLSI Design, Vol. 13, pp. 441–446, 2001.
  • J. R. Watling, Y. P. Zhao, A. Asenov and J. R. Barker, "Non-equilibrium hole transport in deep sub-micron Well-Tempered Si p-MOSFETs," VLSI Design, Vol. 13, pp. 169–174, 2001.

2000

  • J. R. Barker and J. R. Watling, "Three-dimensional modelling of dissipative quantum transport in quantum dots and atomistic scale devices using non-Hermitian generalized potential," Superlattices and Microstructures, Vol. 27, pp. 347–351, 2000.
  • S. Kaya, Y. P. Zhao, J. R. Watling, A. Asenov, J. R. Barker, G. Ansaripour, G. Braithwaite, T. E. Whall and E. H. C. Parker, "Indication of velocity overshoot in strained Si0.8Ge.2 p-channel MOSFETs," Semiconductor Science and Technology, Vol. 15, pp. 573–578, 2000.
  • J. R. Watling, J. R. Barker and A. Asenov, "Soft sphere model for electron correlation and scattering in the atomistic modelling of semiconductor devices," in Proc. Proceedings of the International Workshop on Computational Electronics IWCE00,
  • J. R. Watling, Y. P. Zhao, A. Asenov and J. R. Barker, "Non-equilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs," in Proc. Proceedings of the International Workshop on Computational Electronics IWCE00,
  • Y. P. Zhao, J. R. Watling, S. Kaya, A. Asenov and J. R. Barker, "Drift Diffusion and hydrodynamic simulations of Si/SiGe p-MOSFETs," Materials Science and Engineering (B)-Solid State Materials for Advanced Technology, Vol. 72, pp. 180–183, 2000.
  • Y. P. Zhao, S. Kaya, J. R. Watling, A. Asenov, J. R. Barker, M. J. Palmer, G. Braithwaite, T. E. Whall and E. H. C. Parker, "Indication of Non-equilibrium Transport in SiGe p-MOSFETs," in Proc. Proc. ESSDERC, pp. 224–227.

1999

  • A. Asenov, S. Roy and J. R. Watling, "SiGe for RF applications," in Proc. IEE Colloquium Advances in Semiconductor Devices, Jan.
  • S. J. Sweeney, A. R. Adams, M. Silver, E. P. O'Reilly, J. R. Watling, A. B. Walker and P. J. A. Thijs, "Dependence of threshold current on QW position and on pressure in 1.5μm InGaAs(P) lasers," Physica Status Solidi (b), Vol. 211, pp. 525–531, 1999.
  • J. R. Watling, A. B. Walker, J. J. Harris and J. M. Roberts, "Monte Carlo simulation of electron transport in delta-doped lattice-matched and strained-balanced InGaAs/InAlAs quantum wells," Semiconductor Science and Technology, Vol. 14, pp. 12–22, 1999.

1998

  • J. R. Watling, A. B. Walker, J. J. Harris and J. M. Roberts, "Monte Carlo simulation of electron transport in highly delta-doped GaAs/AlGaAs quantum wells," Semiconductor Science and Technology, Vol. 13, pp. 43–53, 1998.
  • J. R. Watling, A. Asenov and J. R. Barker, "Efficient hole transport model in warped bands for use in the simulation of Si/SIGe MOSFETs," in Proc. Proceedings of IWCE 98, IEEE Cat. NO. 98EX116, pp. 96–99.

1997

  • P. J. Klar, J. R. Watling, D. Wolverson, J. J. Davies, D. E. Ashenford and B. Lunn, "Magnetic-field induced type I to type II transition in Zn1-xMnxTe/ZnTe multiple quantum well samples," Semiconductor Science and Technology, Vol. 12, pp. 1240–1251, 1997.