Area of Work
FinFET statistical Compact Modelling
Continuous scaling down of transistors moves them to hit the physical limitation of devices. Short channel effect, increasing leakage current, statistical variation due to discreteness of charge and granularity of matter, gate insulator tunnelling, and limited control of doping concentration are main obstacles toward further down scaling of devices.
FinFETs are the most promising device structures to address short channel effects and leakage issues in deeply scaled CMOS, as FinFETs can be fabricated using conventional CMOS processes, and because these can be made in a self-aligned process.
1- Hamid Amini Moghadam, Ali A. Orouji, and A. Dideban, “A novel 4H-SiC SOI-MESFET with modified breakdown voltage mechanism for improving the electrical performance” Semiconductor Science and technology journal, vol. 27, 2012.
2- Ali A. Orouji, S. M. Razavi, Seyed Ebrahim Hosseini, and Hamid Amini Moghadam, "Investigation of the novel attributes in double recessed gate SiC MESFETs at drain side" Semiconductor Science and technology journal, vol. 26, 2011.
3- S. E. Jamali Mahabadi, Ali A. Orouji, P. Keshavarzi and Hamid Amini Moghadam, “A New Partial SOI LDMOSFET with Modified Buried Oxide Layer for Improving Self Heating and Breakdown Voltage” Semiconductor Science and technology, vol. 26, pp. 1-12, 2011.
4- Hamid Amini Moghadam, and Ali A. Orouji, “Design and performance consideration of novel 4H-SiC MESFET with a p-type pillar for increasing breakdown voltage” Physica E: Low-dimensional Systems and Nanostructures, vol. 43, pp. 1779-1782, 2011.
5- Ali A. Orouji, Hamid Amini Moghadam, and A. Dideban, “Double window partial SOI-LDMOSFET: A novel device for breakdown voltage improvement” Physica E: Low-dimensional Systems and Nanostructures, vol. 43, no. 1, pp. 498-502, 2010.
6- Hamid Amini Moghadam, Ali A. Orouji, and S. E. Jamali Mahabadi, “Employing RESURF Technique by a P-type Region in 4H-SiC MESFETs for Increasing Breakdown Voltage”,International Journal of numerical modeling, 2012.