Area of work
Welcome :: Selamat Datang
Anis Suhaila is currently the 2nd year PhD student in Device Modelling Group under the supervisions of Professor Asen Asenov and Dr. Binjie Cheng. Received M.Sc and B.Eng degrees in Electrical, Electronics and Systems (Microelectronics) from National University of Malaysia.
At present, I am working on scaling of Ultra Thin Body Silicon On Insulator (UTB SOI) device design for 22nm, 16 nm and 11 nm technology generations. The core of this research is to study the statistical variability and reliability in advanced UTB SOI MOSFETs and its impact on circuits and systems.
Since the bulk MOSFET is almost approaching the limit of scaling and due to severe variability problems, it is expected by the International Technology Roadmap for Semiconductors (ITRS) that bulk MOSFET will be replaced by UTBSOI devices. This is due to the fact that UTBSOI structure can tolerate very low channel doping concentration due to much improved electrostatic integrity, and as a result, the variability from random discrete dopant (RDD) will be dramatically reduced. However, there are new variability sources that are becoming crucial including metal gate granularity, and therefore it is urgent to investigate the impact of different variability sources on the characteristics of properly scaled UTBSOI device architectures.
Design of 22 nm UTB SOI single gate MOSFET
Contact :
School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT, Scotland UK.
email: anis@elec.gla.ac.uk
Recent grants worked on
| 2010- Present |
My current PhD study is sponsored by my home institution, Universiti Teknikal Malaysia Melaka (UTeM) and Ministry of Higher Education (MOHE). |