News

11th Sep 2012

Two Day Course on Device Variability at the University of Glasgow, 19-20th November 2012

 

Device Variability And Its Impact on Circuits and Electronic Systems.

Timetable, location and registration now available.

20th Aug 2012

Two Day Course on Device Variability at the University of Glasgow, 19-20th November 2012

 

Device Variability And Its Impact on Circuits and Electronic Systems.

The course is organized by StatDes (Statistical Design and Verification of Analogue Systems) knowledge transfer project in collaboration with IBM, Wolfson Micro Electronics, Gold Standard Simulations, the University of Edinburgh and the University of Glasgow. It will cover the fundamental physics of variability in modern day transistors of different architectures and their impact on digital and analogue systems. Moreover, the adverse effects of such fluctuations in SRAM circuits will also be covered in the course. Detail will be announced shortly.

7th Jun 2012

Device Modelling at VARI 2012

 

LogoVari.pngThe 3rd European Workshop on CMOS Variability, VARI 2012, is taking place in Nice from the 11-12 June 2012, and the Device Modelling Group is contributing 4th papers.

Professor Asen Asenov opens the conference with a keynote presentation entitled "Device-Circuit Interplay in the Simulation of Statistical CMOS Variability". This is followed on the first day by papers from Yunxiang Yang (a collaboration between Peking University, Device Modelling and Gold Standard Simulations) on 22nm UTBB SOI variablity and Jie Ding's paper "Statistical Compact Model Extraction in the Presence of BTI Degradation". On the second day of the conference Plamen Asenov will present a further paper on statistical compact model extraction.

6th Dec 2011

SOI FinFets posied to meet variability requirements of 11nm CMOS

  A joint paper between the Device Modelling Group and Gold Standard Simulations, Ltd (GSS) presented at the International Electron Devices Meeting (IEDM) held this week reveals that SOI FinFETs are poised to meet the low statistical variability requirements of 11nm CMOS technology.

Electronics Weekly: SOI finfet will scale to 11nm, says Asenov.
Compute Scotland: SOI FinFETs for 11nm CMOS.