Extraction

Using standard TCAD process simulation tools, the structure for a 35nm MOSFET was developed. This structure, based on published data by Toshiba, was then extracted and entered into the GARAND simulation tool.

Callibration

The GARAND simulation tool is carefully callibrated to match both experimental data and simulation data for the developed 35nm MOSFET.

Simulation

Once callibrated the GARAND simulation tool is used to create statistical ensembles of devices including various sources of variability such as random dopants, line edge roughness, oxide thickness variation, Poly-Si granularty and High-k granularity.

Results

For each statistical ensemble it is possible to calculate threshold voltage variability, off/on current variability or the full I-V characteristic of each device in the ensemble.

Circuit Simulation