A new EPSRC Platform Grant on "Atomistic Simulation of Nanoscaled Devices" has been awarded to the Glasgow Device Modelling Group in recognition of our leading role in the simulation of quantum and atomistic effects in nanometre scale semiconductor devices.

The grant, co-authored by Asen Asenov (PI), John R. Barker, Scott Roy, Jeremy Watling, Andrew Brown and Karol Kalna, aims to develop the next generation simulation tools and methodology for semiconductor devices, which consist of only a few thousand, or even hundreds, of atoms, and takes into account the discreteness of charge and the atomicity of matter.

This programme is closely linked to the recent Shared University Research grant award from IBM, which provides the necessary computing power. The Platform Grant involves support and collaborations with IBM TJ Watson Research Centre, NASA Ames Research Centre, The Office of Naval Research, Motorola, Intel, Synopsis, Arizona State and Purdue Universities.

Sketch of a sub 10 nm MOSFET with the silicon lattice and dopants superimposed to scale.	Photoshop created impression of a 4 nm double gate MOSFET.