C. Riddet, A. R. Brown, C. Alexander, J. R. Watling, S. Roy and A. Asenov, “3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs”, IEEE Trans. Nanotechnology, Vol. 6, No. 1, pp.48-55, January 2007.

J. Magill and S. Roy, “Chips for everyone: developing creativity in engineering and initial teacher education”, Engineering Education, Vol. 2, No. 1, pp.40-46, 2007.

A. R. Brown, G. Roy and A. Asenov, “Poly-Si Gate Related Variability in Decananometre MOSFETs with Conventional Architecture”, IEEE Trans. Electron Dev., Vol. 54, No. 11, pp.3056-3063, 2007.

K. Samsudin, B. Cheng, A. R. Brown, S. Roy and A. Asenov, “Integrating intrinsic parameter fluctuation description into BSIMSOI to forecast sub-15 nm UTB SOI based 6T SRAM operation”, Solid-State Electronics, Vol. 50, No. 1, pp.86-93, January 2006.

K. Samsudin, B. Cheng, A. R. Brown, S. Roy and A. Asenov, “Sub-25 nm UTB SOI SRAM cell under the influence of discrete random dopants”, Solid-State Electronics, Vol. 50, No. 4, pp.660-667, April 2006.

K. Kalna, A. Asenov and M. Passlack, “Monte Carlo simulation of implant free InGaAs MOSFET”, Journal of Physics: Conference Series, Vol. 38, pp.200-203, 2006.

A. R. Brown, J. R. Watling and A. Asenov, “Intrinsic Parameter Fluctuations due to Random Grain Orientations in High-k Gate Stacks”, J. Computational Electronics, Vol. 5, pp.333-336, 2006.

C. Millar, S. Roy, O. Beckstein, M. S. P. Sansom and A. Asenov, “Continuum Vs. Particle Simulations of Model Nano-Pores”, J. Computational Electronics, 2006.

N. Seoane, A. J. Garcia Loureiro, K. Kalna and A. Asenov, “Current variations in PHEMTS introduced by channel composition fluctuations”, Journal of Physics: Conference Series, Vol. 38, pp.212-215, 2006.

N. Seoane, A. J. Garcia Loureiro, K. Kalna and A. Asenov, “Atomistic effect of delta doping layer in a 50 nm InP HEMT”, J. Computational Electronics, Vol. 5, pp.131-135, 2006.

G. Ferrari, P. Bordone and C. Jacoboni, “Electron Dynamics Inside Short-Coherence Systems”, Physics Letters A, Vol. 356, pp.371, 2006.

G. Roy, F. Adamu-Lema, A. R. Brown, S. Roy and A. Asenov, “Intrinsic Parameter Fluctuations in Conventional MOSFETs until the End of the ITRS: A Statistical Simulation Study”, Journal of Physics: Conference Series, Vol. 38, pp.188-191, 2006.

J. R. Barker, J. R. Watling and G. Ferrari, “SO phonon scattering rates at the Si-HfO2 interface in Si MOSFETs”, Journal of Physics: Conference Series, Vol. 38, pp.184, 2006.

G. Ferrari, J. R. Watling, S. Roy, J. R. Barker, P. Zeitzoff, G. Bersuker and A. Asenov, “On the Impact of High-k Gate Stacks on Mobility: A Monte Carlo Study Including Coupled SO Phonon-plasmon Scattering”, J. Computational Electronics, 2006.

G. Ferrari, A. Asenov, M. Nedjalkov and C. Jacoboni, “Introducing energy broadening in semiclassical Monte Carlo simulations”, J. Computational Electronics, 2006.

E. Cancellieri, M. Rosini, A. Bertoni, G. Ferrari and C. Jacoboni, “Conductance of Winding Wires”, J. Computational Electronics, 2006.

G. Ferrari, J. R. Watling, S. Roy, J. R. Barker, P. Zeitzoff, G. Bersuker and A. Asenov, “Monte Carlo study of mobility in Si devices with HfO2 based oxides”, Materials Science in Semiconductor Processing, 2006.

G. Ferrari, J. R. Watling, S. Roy, J. R. Barker and A. Asenov, “Beyond SiO2 technology: The impact of high-k dielectrics”, Journal of Non-Crystalline Solids, 2006.

J. R. Barker, A. Martinez, A. Svizhenko, A. Anantram and A. Asenov, “Green function study of quantum transport in ultra-small devices with embedded atomistic cluster”, Journal of Physics: Conference Series, Vol. 35, pp.233-246, 2006.

J. R. Barker and J. R. Watling, “Non-Equilibrium Dielectric Response of High-K Gate Stacks in Si-MOSFETS: Application to SO interface phonon scattering”, Journal of Physics: Conference Series, Vol. 35, pp.255-268, 2006.

F. Rodriguez-Salazar and J. R. Barker, “Hamming hypermeshes: high performance interconnection networks for pin-out limited systems”, Performance Evaluation, Vol. 63, pp.759-775, 2006.

A. Martinez, A. Svizhenko, M. P. Anantram, J. R. Barker and A. Asenov, “ A NEGF study of the effect of surface roughness on CMOS nanotransistors,”, Journal of Physics: Conference Series, Vol. 135, 2006.

J. Trinder, J. Magill and S. Roy, “Portable assessment: towards ubiquitous education”, International Journal of Electrical Engineering Education, Vol. 42, No. 1, pp.73-78, January 2005.

S. Roy and A. Asenov, “Intrinsic parameter fluctuations in Nano-scale CMOS”, Science, Vol. 309, pp.388, July 2005.

C. Millar, A. Asenov and S. Roy, “Self-Consistent Particle Simulation of Ion Channels”, J. Computational and Theoretical Nanotechnology, Vol. 2, No. 1, 2005.

A. J. Garcia Loureiro, K. Kalna and A. Asenov, “Efficient three-dimensional parallel simulations of PHEMTs”, Int. J. Numer. Model.-Electron. Netw. Device Fields, Vol. 18, pp.327-340, 2005.

C. Millar, A. Asenov, A. R. Brown and S. Roy, “Tracking the propagation of individual ions through nano-MOSFETs”, J. Computational Electronics, Vol. 4, No. 1-2, pp.185-188, Apr 2005.

B. Cheng, S. Roy, G. Roy, F. Adamu-Lema and A. Asenov, “Impact of Intrinsic Parameter Fluctuations in Decanano MOSFETs on yield and functionality of SRAM Cells”, Solid-State Electronics, Vol. 49, No. 5, pp.740, 2005.

C. Alexander, A. R. Brown, J. R. Watling and A. Asenov, “Impact of Single charge trapping in nano-MOSFETs”, IEEE Trans. Nanotechnology, Vol. 49, No. 1, pp.339-344, 2005.

J. R. Barker, “Predicting current flow; quantum transport from atom to transistor”, Chemistry World, Vol. 2, 2005.

J. R. Watling, L. Yang, J. R. Barker, S. Roy and A. Asenov, “Impact of high-k dielectric HfO2 on the mobility and device performance of Sub-100nm n-MOSFETs”, IEEE Trans. Reliability, Vol. 5, pp.103-108, 2005.

J. R. Watling, L. Yang, M. Boriçi, R. C. W. Wilkins, A. Asenov, J. R. Barker and S. Roy, “The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs”, Solid-State Electronics, Vol. 48, pp.1337-1346, 2004.

M. Boriçi, J. R. Watling, R. C. W. Wilkins, L. Yang, J. R. Barker and A. Asenov, “Interface roughness scattering and its impact on electron transport in relaxed and strained Si n-MOSFETs”, Semiconductor Science and Technology, Vol. 19S, No. 4, pp.155-157, 2004.

L. Yang, J. R. Watling, R. C. W. Wilkins, M. Boriçi, J. R. Barker, A. Asenov and S. Roy, “Si/SiGe heterostructure parameters for device simulations”, Semiconductor Science and Technology, Vol. 19, pp.1174-1182, 2004.

L. Yang, A. Asenov, J. R. Watling, M. Boriçi, J. R. Barker, S. Roy, K. Elgaid, I. Thayne and T. Hackbarth, “Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs”, Microelectronics Reliability, Vol. 44, No. 7, pp.1101-1107, July 2004.

K. Kalna, M. Boriçi, L. Yang and A. Asenov, “Monte Carlo simulations of III-V MOSFETs”, Semiconductor Science and Technology, Vol. 19, pp.S202-S205, 2004.

K. Kalna and A. Asenov, “Role of multiple delta doping in PHEMTs scaled to sub-100 nm dimensions”, Solid-State Electronics, Vol. 48, pp.1223-1232, 2004.

C. Alexander, J. R. Watling and A. Asenov, “Small volume mobility variations due to lonised impurity scattering”, Semiconductor Science and Technology, Vol. 10S, pp.139-141, 2004.

A. Lee, A. R. Brown, A. Asenov and S. Roy, “RTS amplitudes in decanano n-MOSFETs with conventional and high-k gate stacks”, J. Computational Electronics, Vol. 3, pp.247-250, 2004.

C. Riddet, A. R. Brown, C. Alexander, J. R. Watling, S. Roy and A. Asenov, “Scattering From Body Thickness Fluctuations in Double Gate MOSFETs. An ab initio Monte Carlo Study.”, J. Comp. Elec, Vol. 3, pp.341-345, 2004.

J. R. Barker and A. Barmpoutis, “Smart dust: Monte Carlo simulation of self-organised transport”, J. Comp. Elec, pp.317-321, 2004.

J. R. Barker and A. Martinez, “Vortex flows in semiconductor device quantum channels: time-dependent simulation”, J. Comp. Elec, pp.401-405, 2004.

C. Alexander, A. R. Brown, J. R. Watling and A. Asenov, “Impact of Scattering in atomistic Device Simulations”, Solid-State Electronics, Vol. 49, No. 5, pp.733-739, 2004.

F. Adamu-Lema, G. Roy, A. R. Brown, A. Asenov and S. Roy, “Intrinsic parameter fluctuations in conventional MOSFETs at the scaling limit:a statistical study”, J. Computational Electronics, Vol. 3, pp.203-206, 2004.

J. R. Barker, “, Quantum fluctuations in atomistic semiconductor devices”, Superlattices and Microstructures, Vol. 34, pp.361, 2004.

J. R. Barker, “Non-equilibrium quantum transport in finite device structures in the presence of non-self-averaged atomistic impurity scattering”, Semiconductor Science and Technology, Vol. 19S, pp.56--59, 2004.

A. R. Brown, F. Adamu-Lema and A. Asenov, “Intrinsic Parameter Fluctuations in Nanometre Scale Thin-body SOI Devices Introduced by Interface Roughness”, Superlattices and Microstructures, Vol. 34, No. 3-6, pp.283-291, 2003.

J. R. Watling, L. Yang, M. Boriçi, J. R. Barker and A. Asenov, “Degeneracy and high doping effects in deep sub-micron relaxed and strained Si n-MOSFETs”, J. Computational Electronics, Vol. 2, pp.475-479, 2003.

S. Roy, B. Cheng, G. Roy and A. Asenov, “A methodology for introducing 'atomistic' parameter fluctuations into compact device models for circuit simulation”, J. Computational Electronics, Vol. 2, pp.427-431, 2003.

S. Roy, A. Lee, A. R. Brown and A. Asenov, “Application of quasi-3D and 3D MOSFET simulations in the atomistic regime”, J. Computational Electronics, Vol. 2, pp.423-426, 2003.

L. C. Chirwa, P. A. Hammond, S. Roy and D. R. S. Cumming, “Radiation from ingested wireless devices in bio-medical telemetry bands”, Electronics Letters, Vol. 39, No. 2, pp.178-179, 2003.

L. C. Chirwa, S. Roy and D. R. S. Cumming, “Determination of electromagnetic radiation from ingested sources in the human intestine using FDTD between 150MHz and 1.2GHz”, Electronics Letters, Vol. 50, No. 4, pp.484-492, April 2003.

W. Ma, S. Kaya and A. Asenov, “Study of RF linearity in sub-50 nm MOSFETs using simulations”, J. Computational Electronics, Vol. 2, pp.347-352, 2003.

L. Yang, J. R. Watling, M. Boriçi, J. R. Barker and A. Asenov, “Simulations of scaled sub-100nm strained Si/SiGe p-channel MOSFETs”, J. Computational Electronics, Vol. 2, No. 2, pp.363-368, 2003.

M. Boriçi, J. R. Watling, R. C. W. Wilkins and J. R. Barker, “A non-perturbative model of surface roughness scattering for Monte Carlo simulation of relaxed silicon n-MOSFETs”, J. Computational Electronics, Vol. 2, pp.163-167, 2003.

A. Asenov, A. R. Brown and J. R. Watling, “Quantum Corrections in the simulation of decanano MOSFETs”, Solid-State Electronics, Vol. 47, pp.1141-1145, 2003.

A. Asenov, J. R. Watling, A. R. Brown and D. K. Ferry, “The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices”, J. Computational Electronics, Vol. 1, pp.503-513, 2003.

K. Kalna and A. Asenov, “Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: A Monte Carlo simulation study”, Mathematics and Computers in Simulations, Vol. 62, pp.357-366, 2003.

K. Kalna and A. Asenov, “Gate tunnelling and impact ionisation in sub 100 nm PHEMTs”, IEICE Transactions on Electronics, Vol. E86-C, pp.330-335, 2003.

K. Kalna, L. Yang and A. Asenov, “Simulation Study of High Performance III-V MOSFETs for Digital Applications”, J. Computational Electronics, Vol. 2, pp.341-345, 2003.

A. J. Garcia Loureiro, K. Kalna and A. Asenov, “3D Parallel Simulations of Fluctuation Effects in pHEMTs”, J. Computational Electronics, Vol. 2, pp.369-373, 2003.

G. Roy, A. R. Brown, A. Asenov and S. Roy, “Bipolar quantum corrections in resolving individual dopants in 'atomistic' device simulations”, Superlattices and Microstructures, Vol. 34, No. 3-6, pp.327-334, 2003.

C. Alexander, A. R. Brown, J. R. Watling and A. Asenov, “Artificial carrier heating due to the introduction of ab-initio Coulomb scattering in Monte Carlo simulations.”, Superlattices and Microstructures, Vol. 34, No. 3-6, pp.319-326, 2003.

A. Lee, A. R. Brown, A. Asenov and S. Roy, “RTS noise simulations of decanano MOSFET's subject to atomic scale structure variations.”, Superlattices and Microstructures, Vol. 34, No. 3-6, 2003.

G. Roy, A. R. Brown, A. Asenov and S. Roy, “Quantum aspects of resolving discrete charges in 'Atomistic' Device Simulations”, J. Computational Electronics, Vol. 2, pp.323-327, 2003.

C. Alexander, J. R. Watling and A. Asenov, “Mobility variations in ultra-small devices due to discrete charges.”, J. Computational Electronics, Vol. 2, pp.285-289, 2003.

C. Millar, A. Asenov and S. Roy, “Brownian ionic channel simulation.”, J. Computational Electronics, Vol. 2, pp.257-262, 2003.

A. Asenov, S. Kaya and A. R. Brown, “Intrinsic Parameter Fluctuations in Decananometre MOSFET's Introduced by Gate Line Edge Roughness”, IEEE Trans. Electron Dev., Vol. 50, pp.1254-1260, 2003.

A. Asenov, A. R. Brown, J. H. Davies, S. Kaya and G. Slavcheva, “Simulation of Intrinsic Parameter Fluctuations in Decananometre and Nanometre scale MOSFET's.”, IEEE Trans. Electron Dev., Vol. 50, pp.1837-1852, 2003.

A. Asenov, R. Balasubramaniam, A. R. Brown and J. H. Davies, “RTS amplitudes in decananometer MOSFET's: A 3D simulation study”, IEEE Trans. Electron Dev., Vol. 50, pp.839-845, 2003.

C. Millar, A. Asenov and S. Roy, “Brownian Ionic Channel Simulation”, J. Computational Electronics, Vol. 2, No. 2, pp.257-262, 2003.

J. R. Barker, “A theoretical study of atomistic effects on the quantum hydrodynamics of carriers in decanano semiconductor devices using non-self-averaged Green functions”, Physica E, Vol. 19, pp.62-70, 2003.

L. C. Chirwa, P. A. Hammond, S. Roy and D. R. S. Cumming, “Electromagnetic radiation from ingested sources in the human intestine between 150 MHz and 1.2 GHz”, IEEE Trans. Biomedical Engineering, Vol. 50, No. 4, pp.484-492, April 2003.

J. R. Barker, “Green function simulation study of non self-averaging scattering processes in atomistic semiconductor devices”, J. Comp. Elec, Vol. 2, pp.153--161, 2003.

A. R. Brown, A. Asenov and J. R. Watling, “Intrinsic Fluctuations in Sub 10 nm Double-Gate MOSFETs Introduced by Discreteness of Charge and Matter”, IEEE Trans. Nanotechnology, Vol. 1, pp.195-200, 2002.

A. R. Brown, J. R. Watling and A. Asenov, “A 3-D Atomistic Study of Archetypal Double Gate MOSFET Structures”, J. Computational Electronics, Vol. 1, pp.165-169, 2002.

S. Kaya, A. Asenov and S. Roy, “Breakdown of universal mobility curves in sub-100nm MOSFETs”, IEEE Trans. Nanotechnology, Vol. 1, pp.260-264, 2002.

S. Kaya, A. Asenov and S. Roy, “On the breakdown of universal mobility curves: a Brownian 3D simulation study”, J. Computational Electronics, Vol. 1, pp.375-379, 2002.

J. R. Watling, J. R. Barker and S. Roy, “Quantum potential corrections for spatially dependent effective masses with application to charge confinement at heterostructure interfaces”, Electronics Letters, Vol. 1, No. 1-2, pp.2790282, July 2002.

J. R. Barker and J. R. Watling, “Traversal-times and charge confinement for spatially-dependent effective masses within semiconductor heterostructures: the quantum potential approach”, Microelectronic Engineering, Vol. 63, pp.97-103, 2002.

J. R. Watling, J. R. Barker and S. Roy, “Quantum Potential Corrections for Spatially Dependent Effective Masses with Application to Charge Confinement at Heterostructure Interfaces”, J. Computational Electronics, Vol. 1, pp.279-282, 2002.

J. R. Watling, A. R. Brown and A. Asenov, “Can the density gradient approach describe the source-drain tunnelling in decanano double-gate MOSFETs?”, J. Computational Electronics, Vol. 1, pp.289-293, 2002.

K. Kalna, S. Roy, A. Asenov, K. Elgaid and I. Thayne, “Scaling of pseudomorphic high electron mobility transistors to decanano dimensions”, Solid-State Electronics, Vol. 46, pp.631-638, 2002.

K. Kalna and A. Asenov, “Quantum corrections in the Monte Carlo simulations of scaled PHEMTs with multiple delta doping”, J. Computational Electronics, Vol. 1, pp.257-261, 2002.

K. Kalna and A. Asenov, “Nonequilibrium transport in scaled high electron mobility transistors”, Semiconductor Science and Technology, Vol. 17, pp.579-584, 2002.

A. Asenov, S. Kaya and A. R. Brown, “Implications of Imperfect Interfaces and Edges in Ultra-small MOSFET Characteristics”, Physica Status Solidi (b), Vol. 233, No. 1, pp.101-112, 2002.

H. Unlu and A. Asenov, “Band offsets in III-nitride heterostructure.”, Journal of Physics D: Applied Physics, Vol. 35, pp.591-594, 2002.

G. Slavcheva, J. H. Davies, A. R. Brown and A. Asenov, “Potential fluctuations in MOSFET's generated by randomly distributed impurities in the depletion layer.”, Journal of Applied Physics, Vol. 91, pp.4326-4334, 2002.

A. Asenov, S. Kaya and J. H. Davies, “Intrinsic Threshold Voltage Fluctuations in Decanano MOSFET's due to Local Oxide Thickness Variations”, IEEE Trans. Electron Dev., Vol. 49, pp.112-119, 2002.

C. Millar, A. Asenov and J. R. Watling, “Excessive Over-Relaxation Method For Multigrid Poisson Solvers”, J. Computational Electronics, Vol. 1, No. 3, pp.341-345, 2002.

C. Millar, A. Asenov and S. Roy, “A Generic Particle-Mesh Framework For The Simulation Of Ionic Channels”, J. Computational Electronics, Vol. 1, No. 3, pp.405-409, 2002.

J. R. Watling, Y. P. Zhao, A. Asenov and J. R. Barker, “Non-equilibrium hole transport in deep sub-micron Well-Tempered Si p-MOSFETs”, VLSI Design, Vol. 13, pp.169-174, 2001.

J. R. Watling, J. R. Barker and A. Asenov, “Soft sphere model for electron correlation and scattering in the atomistic modelling of semiconductor devices”, VLSI Design, Vol. 13, pp.441-446, 2001.

J. R. Barker and J. R. Watling, “Simulation of enhanced interface trapping due to carrier dynamics in warped valence bands in SiGe devices”, VLSI Design, Vol. 13, pp.453-458, 2001.

J. R. Barker, J. R. Watling and R. C. W. Wilkins, “A fast algorithm for the study of wave-packet scattering at disordered interfaces”, VLSI Design, Vol. 13, pp.199-204, 2001.

K. Kalna, A. Asenov, K. Elgaid and I. Thayne, “Scaling of pHEMTs to Decanano Dimensions”, VLSI Design, Vol. 13, No. 1-4, pp.435-439, 2001.

A. R. Knox, A. Asenov and A. C. Lowe, “An Electron Emission Model For Use With 3D Electromagnetic Finite Element Simulation”, Solid-State Electronics, Vol. 45, pp.841-851, 2001.

U. N. Straube, A. G. R. Evans, G. Braithwaite, S. Kaya, J. R. Watling and A. Asenov, “On the mobility extraction for HMOSFET's.”, Solid-State Electronics, Vol. 45, pp.527-529, 2001.

M. J. Palmer, G. Braithwaite, T. J. Grasby, P. J. Phillips, M. J. Prest, E. H. C. Parker, T. E. Whall, C. P. Parry, A. M. Waite, A. G. R. Evans, S. Roy, J. R. Watling, S. Kaya and A. Asenov, “Effective mobility in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field effect transistors with thin silicon capping layers.”, Applied Physics Letters, Vol. 78, pp.1424-1426, 2001.

A. Asenov, “Quantum correction to the 'atomistic' MOSFET simulation.”, VLSI Design, Vol. 13, pp.15-21, 2001.

A. Asenov, G. Slavcheva, A. R. Brown, J. H. Davies and S. Saini, “Quantum enhancement of the random dopant induced threshold voltage fluctuations in sub 100 nm MOSFETs: A 3-D density-gradient simulation study”, IEEE Trans. Electron Dev., Vol. 48, pp.722-729, 2001.

S. Roy, S. Kaya, A. Asenov and J. R. Barker, “RF analysis methodology for Si and SiGe FETs based on transient Monte Carlo simulations”, IEICE Transactions on Electronics, Vol. VI. E83-C, No. 8, pp.1224-1227, 2000.

J. R. Barker and J. R. Watling, “Three-dimensional modelling of dissipative quantum transport in quantum dots and atomistic scale devices using non-Hermitian generalized potential”, Superlattices and Microstructures, Vol. 27, pp.347-351, 2000.

S. Kaya, Y. P. Zhao, J. R. Watling, A. Asenov, J. R. Barker, G. Ansaripour, G. Braithwaite, T. E. Whall and E. H. C. Parker, “Indication of velocity overshoot in strained Si0.8Ge.2 p-channel MOSFETs”, Semiconductor Science and Technology, Vol. 15, pp.573-578, 2000.

Y. P. Zhao, J. R. Watling, S. Kaya, A. Asenov and J. R. Barker, “Drift Diffusion and hydrodynamic simulations of Si/SiGe p-MOSFETs”, Materials Science and Engineering (B)-Solid State Materials for Advanced Technology, Vol. 72, pp.180-183, 2000.

K. Kalna, C. Y. L. Cheung, I. Pierce and K. A. Shore, “Self-consistent analysis of carrier transport and carrier capture dynamics in quantum cascade intersubband semiconductor lasers”, IEEE Trans. Microwave Theory Tech., Vol. 48, pp.639-644, 2000.

A. Asenov, R. Balasubramaniam, A. R. Brown and J. H. Davies, “Effect of Single electron trapping in decanano MOSFETs: A 3D “atomistic” simulation study”, Superlattices and Microstructures, Vol. 27, No. 5/6, pp.411-416, 2000.

A. Asenov, S. Kaya, J. H. Davies and S. Saini, “Oxide Thickness Variation Induced Threshold Voltage Fluctuations in Decanano MOSFETs: A 3D Density Gradient Simulation Study”, Superlattices and Microstructures, Vol. 28, No. 5/6, pp.507-515, 2000.

A. Asenov and S. Saini, “Polysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub 100 nm MOSFETs with Tunnelling Oxide”, IEEE Trans. Electron Dev., Vol. 47, No. 4, pp.805-812, 2000.

A. Asenov, G. Slavcheva, A. R. Brown, R. Balasubramaniam and J. H. Davies, “Statistical, 3D “atomistic” simulation of decanano MOSFETs”, Superlattices and Microstructures, Vol. 27, No. 2/3, pp.215-227, 2000.

S. Babiker, A. Asenov, S. Roy and S. P. Beaumont, “Strain engineered pHEMTs on virtual substrates”, Solid-State Electronics, Vol. 43, pp.1281-1288, 1999.

J. R. Barker, “A semi-empirical technique for simulating mesoscopic quantum transport in warped band structures”, Microelectronic Engineering, Vol. 47, pp.369-371, 1999.

J. R. Watling, A. B. Walker, J. J. Harris and J. M. Roberts, “Monte Carlo simulation of electron transport in delta-doped lattice-matched and strained-balanced InGaAs/InAlAs quantum wells”, Semiconductor Science and Technology, Vol. 14, pp.12-22, 1999.

S. J. Sweeney, A. R. Adams, M. Silver, E. P. O'Reilly, J. R. Watling, A. B. Walker and P. J. A. Thijs, “Dependence of threshold current on QW position and on pressure in 1.5μm InGaAs(P) lasers”, Physica Status Solidi (b), Vol. 211, pp.525-531, 1999.

J. L. Pearson, M. C. Holland, C. Stanley, A. R. Long, E. Skuras, A. Asenov and J. H. Davies, “Optimization of layer structure for InGaAs channel pseudomorphic HEMTs”, Journal Of Crystal Growth, Vol. 201/202, pp.757-760, 1999.

J. R. Barker and A. Asenov, “On the design and control of quantum effects in mesoscopic devices”, Microelectronic Engineering, Vol. 47, pp.255-260, 1999.

A. Asenov, A. R. Brown, J. H. Davies and S. Saini, “Hierarchical approach to “atomistic” 3D MOSFET simulation”, IEEE Trans. Computer-Aided Design of Intergrated Circuits and Systems, Vol. 18, pp.1558-1565, 1999.

A. Asenov, “Random dopant induced threshold voltage lowering and fluctuations in sub 50 nm MOSFETs: A 3D “atomistic” simulation study”, Nanotechnology, Vol. 10, pp.153-158, 1999.

A. Asenov and S. Saini, “Supression of random dopant induced threshold voltage fluctuations in sub-0.1μm MOSFETs with epitaxial and delta doped channels”, IEEE Trans. Electron Dev., Vol. 46, No. 8, pp.1718-1724, 1999.

G. Ternent, A. Asenov, I. Thayne, D. MacIntyre, S. Thoms and C. D. W. Wilkinson, “SiGe p-channel MOSFET’s with a tungsten gate”, IEE Electronics Letters, Vol. 35, pp.430-431, 1999.

A. R. Brown, A. Asenov and J. R. Barker, “3D parallel finite element simulation of in-cell breakdown in lateral-channel IGBTs”, VLSI Design, Vol. 8, No. 1-4, pp.99-103, 1998.

S. Babiker, A. Asenov, N. Cameron, S. P. Beaumont and J. R. Barker, “Complete RF analysis of compound FETs based on transient Monte Carlo simulation”, VLSI Design, Vol. 8, No. 1-4, pp.313-317, 1998.

S. Roy, A. Asenov, S. Babiker, J. R. Barker and S. P. Beaumont, “RF performance of Si/SiGe MODFETs: a simulation study”, VLSI Design, Vol. 8, No. 1-4, pp.325-330, 1998.

S. Babiker, A. Asenov, J. R. Barker and S. P. Beaumont, “Quadrilateral finite element Monte Carlo simulation of complex shape compound FETs”, VLSI Design, Vol. 6, No. 1-4, pp.127-130, 1998.

S. Babiker, A. Asenov, N. Cameron, S. P. Beaumont and J. R. Barker, “Complete Monte Carlo RF analysis of 'real' short channel compound FETs”, IEEE Trans. Electron Dev., Vol. 45, No. 8, pp.1644-1652, 1998.

A. Asenov, S. Babiker, S. P. Beaumont and J. R. Barker, “Monte Carlo calibrated drift-diffusion simulation of short channel HFETs”, VLSI Design, Vol. 8, No. 1-4, pp.319-323, 1998.

A. Asenov, A. R. Brown, S. Roy and J. R. Barker, “Topologically rectangular grids in the parallel simulation of semiconductor devices”, VLSI Design, Vol. 6, No. 1-4, pp.91-95, 1998.

J. R. Watling, A. B. Walker, J. J. Harris and J. M. Roberts, “Monte Carlo simulation of electron transport in highly delta-doped GaAs/AlGaAs quantum wells”, Semiconductor Science and Technology, Vol. 13, pp.43-53, 1998.

A. Asenov, “Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFETs: A 3D “atomistic” simulation study”, IEEE Trans. Electron Dev., Vol. 45, No. 12, pp.2505-2513, 1998.

C. R. Arokianathan, J. H. Davies and A. Asenov, “Ab-initio Coulomb scattering in atomistic device simulation”, VLSI Design, Vol. 8, No. 1-4, pp.331-335, 1998.

A. Durndell, F. Uzunova, D. Asenova, A. Asenov and K. Thomson, “Gender neutral engineering: an impossible dream? - the case of Eastern Europe”, Int. J. Sci. Education, Vol. 20, No. 7, pp.783-793, 1998.

C. R. Arokianathan, A. Asenov and J. H. Davies, “A new approach based on Brownian motion for the simulation of ultra-small semiconductor devices”, VLSI Design, Vol. 6, No. 1-4, pp.243-246, 1998.

C. R. Arokianathan, A. Asenov and J. H. Davies, “Mesh-based particle simulation of sub-0.1 micron FETs”, Semiconductor Science and Technology, Vol. 13, No. 8A, pp.A173-A176, 1998.

S. Roy, A. Asenov, S. Babiker, J. R. Barker and S. P. Beaumont, “Monte Carlo analysis of Si/SiGe MODFET performance potential”, Physica Status Solidi (b), Vol. 204, pp.525, 1997.

P. J. Klar, J. R. Watling, D. Wolverson, J. J. Davies, D. E. Ashenford and B. Lunn, “Magnetic-field induced type I to type II transition in Zn1-xMnxTe/ZnTe multiple quantum well samples”, Semiconductor Science and Technology, Vol. 12, pp.1240-1251, 1997.

K. Kalna, “Phonon confinement and electron capture time in quantum well”, Acta Physica Polonica A, Vol. 92, pp.805-808, 1997.

S. Babiker, A. Asenov, J. R. Barker and S. P. Beaumont, “Finite element Monte Carlo simulation of recess gate compound FETs”, IEEE Trans. Electron Dev., Vol. 39, No. 5, pp.629-635, 1996.

S. Babiker, A. Asenov, N. Cameron and S. P. Beaumont, “Simple approach to include external resistances in the Monte Carlo simulation of MESFETs and HEMTs”, IEEE Trans. Electron Dev., Vol. 43, No. 11, pp.2032-2034, 1996.

S. Babiker, N. Cameron, A. Asenov and S. P. Beaumont, “New evidence for velocity overshoot in a 200nm pseudomorphic HEMT”, Microelectronics Journal, Vol. 27, pp.785-793, 1996.

K. Kalna, M. Mosko and F. M. Peeters, “Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering”, Applied Physics Letters, Vol. 68, pp.117-119, 1996.

K. Kalna and M. Mosko, “Electron capture in quantum wells via scattering by electrons, holes, and optical phonons”, Physical Review B, Vol. 54, pp.17730-17737, 1996.

N. Cameron, S. Murad, H. McLelland, A. Asenov, M. R. S.Taylor, M. C. Holland and S. P. Beaumont, “Gate Recess Engineering of Pseudomorphic In0.3GaAs/GaAs HEMTs”, Electronics Letters, Vol. 32, No. 8, pp.770-772, 1996.

A. Asenov, J. R. Barker, A. R. Brown and G. L. Lee, “Scalable parallel 3D finite element nonlinear Poisson solver”, Journal of Simulation Practice and Theory, Vol. 45, pp.155-168, 1996.

C. R. Arokianathan, A. Asenov and J. H. Davies, “An approach based on Brownian motion for the simulation of ultrasmall semiconductor devices”, Journal of Applied Physics, Vol. 80, No. 1-4, pp.1-7, 1996.

A. Asenov, “Modeling and Simulation in Education and Training”, EUROSIM - Simulation News Europe, No. 6, pp.9, March 1996.

A. Asenov, D. Reid and J. R. Barker, “Speed-up of scalable iterative linear solvers implemented on an array of transputers”, Parallel Computing, Vol. 21, No. 4, pp.669-682, 1995.

I. Nachev and A. Asenov, “Subband energy states in a single quantum barrier heterostructure computed by path integrals”, PHANTOMS Newsletter, No. 10, pp.9-11, 1995.

P. Speckbacher, J. Berger, A. Asenov, F. Koch and W. Weber, “The 'gated diode' configuration in MOSFETs, a sensitive tool for characterising hot carrier degradation”, IEEE Trans. Electron Dev., Vol. 42, No. 7, pp.1287-1297, 1995.

I. Nachev, A. Asenov and N. Velchev, “Theory of Configurational interaction in semiconductor space-charge layer”, Preprint, Int. Centre for Theoretical Physics, Miramare-Trieste, 1994.

K. Kalna, “Boltzmann kinetic equation with correction term for intracollisional field effect”, Semiconductor Science and Technology, Vol. 7, pp.1446-1452, 1992.

P. Chistman, C. Wetzel, B. K. Meyer, A. Asenov and A. Endros, “Spin dependent recombination in Pt doped silicon p-n junction”, Applied Physics Letters, Vol. 60, pp.1857-1859, 1992.

M. E. Raikh and A. Asenov, “Coulomb Blockade of Inelastic Transport Through a Disordered Barrier”, Acta Physica Polonica A, Vol. 37, pp.765, 1992.

M. E. Raikh and A. Asenov, “Inelastic Transport through a disordered barrier. The effect of the Coulomb Blockade”, Superlattices and Microstructures, Vol. 11, pp.325-327, 1992.

J. Marczewski, M. Zachau, A. Asenov and F. Koch, “A Diode Device Combining Lateral Field-Effect Transport and Vertical Tunneling in a Multi Quantum-Well Heterostructure”, IEEE Electron. Dev. Lett., Vol. 13, pp.338-340, 1992.

A. Asenov, J. Berger, W. Weber, M. Bollu and F. Koch, “Fringing Field Related Degradation Monitoring in LDD MOSFET Using Drain Gated Diode Measurements”, Microelectronic Engineering, Vol. 15, pp.445-448, 1991.

I. Nedev, A. Asenov and E. Stefanov, “Experimental study and modeling of band-to-band tunneling leakage current in thin-oxide MOSFETs”, Solid-State Electronics, Vol. 34, pp.1401-1408, 1991.

T. Hummer-Hagger and A. Asenov, “Photoluminescence in GaAs/AlGaAs Heterojunction Bipolar Transistors: Dependence of Signal Strength on Excitation Density”, Journal of Applied Physics, Vol. 69, pp.1583-1590, 1991.

P. Speckbacher, A. Asenov, M. Bollu, F. Koch and W. Weber, “Hot-Carrier-Induced Deep-Level defects From Gated-Diode Measurements on MOSFETs”, IEEE Electron. Dev. Lett., Vol. 11, pp.95-97, 1990.

E. Stefanov and A. Asenov, “An Efficient Diffusion Algorithm for 2-D VLSI Process Modeling Code”, COMPEL, Vol. 9, pp.229-245, 1990.

A. Asenov, M. Bollu, F. Koch and J. Scholz, “On the Nature and Energy Distribution of Defect States Caused by Hot Electrons in Si”, Applied Surface Science, Vol. 30, pp.319-324, 1987.

A. Asenov, E. Stefanov and B. Antov, “Numerical Study of the Effect of the Doping Profile on the Threshold Voltage of Narrow-Channel MOS Transistors”, Solid-State Electronics, Vol. 30, pp.1305-1315, 1987.

A. Asenov, E. Stefanov and B. Antov, “Comparison of Threshold Voltage Criteria for Narrow-Channel MOS Transistors”, Int. J. Electron, Vol. 62, pp.843-847, 1987.

A. Asenov, E. Stefanov, B. Antov and P. Vitanov, “Numerical Analysis of MOS Transistor Effective Channel Width”, Electronics Letters, Vol. 21, pp.595-597, 1985.

E. Goranova, A. Asenov, E. Stefanov and N. Madgarova, “Optimization of Short-Channel MOS Transistor”, Electrical Industry and Device Design, Vol. 20, No. 2, pp.26, 1985.

B. Antov and A. Asenov, “Substrate Current in Short n-Channel MOS Transistors”, Int. J. Electron, Vol. 55, pp.567-578, 1983.

A. Asenov, “Simple Model for Threshold Voltage of a Nonuniformly Doped Short-Channel MOS Transistor”, Electronics Letters, Vol. 18, pp.481-482, 1982.

A. Asenov, E. Stefanov, B. Nikoltchovski, P. Vitanov and E. Goranova, “MOS Technology and Devices Modeling System”, Electrical Industry and Device Design, Vol. 22, No. 8, pp.10, 1978.

A. Asenov, A. R. Brown, B. Cheng, J. R. Watling, G. Roy and C. Alexander, “Simulation of nano-CMOS devices: from atoms to architecture”, Nanotechnology for Electronic Materials and Devices, Springer, 2006.

C. Millar and A. Asenov, “Handbook of Theoretical and Computational Nanotechnology”, American Scientific Publishers, 2005.

J. Trinder, J. Magill and S. Roy, “Mobile Learning : A handbook for educators and trainers”, Routledge, August 2005.

C. Millar and A. Asenov, “P3M Simulation of Biological Ion Channels”, American Scientific Publishers, 2005.

A. Asenov, A. R. Brown and S. Kaya, “Atomistic simulation of decanano MOSFETs”, Predictive process simulation, Springer, 2004, 111-153.

J. R. Barker, “Bohm trajectories in quantum transport”, Progress in Nonequilibrium Greens Functions II, World Scientific Publ., 2003, 198-213.

K. Kalna and M. Mosko, “Heterostructure Epitaxy and Devices”, NATO ASI Series, Kluwer Academic Publishers, 1996, 79-82.

A. Asenov, S. Babiker, N. Cameron, S. Murad, M. C. Holland and S. P. Beaumont, “Devices Based on Low Dimensional Semiconductors”, Kluwer Academic Publishers, 1996.

A. Asenov, N. Cameron, M. R. S.Taylor, M. C. Holland and S. P. Beaumont, “Properties and Applications of Low Dimensional Semiconductors”, Kluwer Academic Publishers, 1995, 101-103.

J. R. Barker, S. Roy and S. Babiker, “Science and Technology of Mesoscopic Structures”, Springer-Verlag, 1992, 213-231.

M. Bollu, A. Asenov and F. Koch, “Physics and Chemistry of Si and the Si-SiO interface”, Pergamon Press, 1988, 134.

F. Koch, M. Bollu and A. Asenov, “MOSFETs Under Electrical Stress - Degradation, Subthreshold Conduction, and Noise in Submicron Structure”, Springer Series in Solid State Physics, Vol. 83, Springer-Verlag, 1988, 253.

A. R. Brown, A. Martinez, M. Bescond and A. Asenov, “Nanowire MOSFET variability: a 3D density gradient versus NEGF approach”, Silicon Nanoelectronics Workshop, pp.127-128, 10-11 June 2007.

K. Samsudin, F. Adamu-Lema, A. R. Brown, S. Roy and A. Asenov, “Intrinsic parameter fluctuations in sub-10 nm generation UTB SOI MOSFETs”, Proc. ULIS 2006, pp.93-96, 2006.

C. Millar, A. Asenov, A. R. Brown and S. Roy, “Simulation of Bio-Nano-CMOS Devices”, SPIE Optics and Photonics, Nanomodelling II, Aug 2006.

C. Millar, A. Asenov and S. Roy, “P3M Modelling of Biological Systems”, E-MRS IUMRS ICEM 2006 Spring Meeting, Symposium Q, July 2006.

K. Kalna, J. A. Wilson, D. A. J. Moran, R. Hill, A. R. Long, R. Droopad, M. Passlack and A. Asenov, “MC simulation of high performance InGaAs nano-MOSFETs for low power CMOS applications”, Proc. IEEE 2006 Silicon Nanoelectronics Workshop, 2006.

B. Cheng, S. Roy and A. Asenov, “The Impact of Intrinsic Parameter Fluctuations on Decananometer Circuits, and Circuit Modelling Techniques”, International Conference - Mixed Design of Integrated Circuits and Systems (MIXDES 2006), June 2006.

S. Roy, B. Cheng and A. Asenov, “Impact of intrinsic parameter fluctuation in nano-CMOS devices on circuits and systems”, International Topical Workshop on Tera- and Nano-Devices: Physics and Modeling, October 2006.

K. Kalna, Q. Wang, M. Passlack and A. Asenov, “Monte Carlo simulations of delta-doping placement in sub-100 nm implant free InGaAs MOSFETs”, E-MRS IUMRS ICEM 2006 Spring Meeting, Symposium B, pp.B 9 03, 2006.

K. Kalna, R. Hill, J. A. Wilson, D. A. J. Moran, A. R. Long, A. Asenov and I. Thayne, “Monte Carlo simulation of sub-30 nm high indium implant free III-V MOSFETs for low power digital applications”, Proc. UK Compound Semiconductors 2006, pp.39, 2006.

A. R. Brown, J. R. Watling and A. Asenov, “Intrinsic Parameter Fluctuations due to Random Grain Orientations in High-k Gate Stacks”, Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE), pp.49-50, 2006.

A. R. Brown, G. Roy and A. Asenov, “Impact of Fermi level pinning at polysilicon gate grain boundaries on nano-MOSFET variability: A 3-D simulation study”, Proc 36th European Solid-State Device Research Conference (ESSDERC), pp.451-454, 2006.

C. Millar, S. Roy, O. Beckstein, M. S. P. Sansom and A. Asenov, “Continuum Vs. Particle Simulations of Model Nano-Pores”, Abstracts of IWCE11, Vienna, May 2006.

N. Seoane, A. J. Garcia Loureiro, K. Kalna and A. Asenov, “A 3D parallel simulation of the effect of interface charge fluctuations in HEMTs”, Proc. 11th International Workshop on Computational Electronics, 2006.

M. Aldegunde, A. J. Garcia Loureiro, K. Kalna and A. Asenov, “3D finite element parallel simulator for studying fluctuations in advanced MOSFETs”, Proc. 11th International Workshop on Computational Electronics, pp.P 37, May 2006.

M. Bescond, N. Cavassilas, A. Asenov and M. Lannoo, “Effective-mass approach for n-type semiconductor nanowire MOSFETs arbitrary oriented”, Proc. ULIS 2006, pp.73-76, 2006.

B. Cheng, S. Roy, G. Roy, A. R. Brown and A. Asenov, “Design Consideration of 6-T SRAM towards the End of Bulk CMOS Technology Scaling Subjected to Random Dopant Fluctuation”, Proc 36th European Solid-State Device Research Conference (ESSDERC), 2006.

B. Cheng, S. Roy and A. Asenov, “Low power, high density CMOS 6-T SRAM cell design subject to ‘atomistic’ fluctuations”, Proc. ULIS 2006, ISBN:88-900874-0-8, pp.33, 2006.

A. Martinez, J. R. Barker, M. P. Anantram, A. Svizhenko and A. Asenov, “ Developing a full 3D NEGF simulator with random dopant and interface roughness”, 11th International Workshop on Computational Electronics, Books of Abstracts, P. 275, 2006.

A. Martinez, J. R. Barker, A. Svizhenko, M. Bescond, M. P. Anantram and A. Asenov, “ A 2D-NEGF quantum transport study of unintentional charges in a double gate nanotransistor”, 14th International Conference on Hot Carriers in Semiconductors (HCIS14), Chicago, Illinois, July, TU 4-4, 2006.

A. Martinez, J. R. Barker, A. Svizhenko, M. P. Anantram and A. Asenov, “The impact of random dopant aggregation in source and drain on the performance of ballistic DG nano-MOSFETs”, Proc. IEEE 2006 Silicon Nanoelectronics Workshop, p. 133, Honolulu, 2006.

A. Martinez, K. Kalna, J. R. Barker and A. Asenov, “A study of the interface roughness effects in Si-nanowires using a full 3D NEGF approach,”, E-MRS IUMRS ICEM 2006 Spring Meeting, Symposium E p1 35, 2006.

C. Riddet, A. R. Brown, C. Alexander, C. Millar, S. Roy and A. Asenov, “Efficient Density Gradient Quantum Corrections for 3D Monte Carlo Simulations”, , pp.200-203, September 2006; International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

C. Millar, A. Asenov and S. Roy, “Simulating Ion Channels and their Nano-CMOS Interface”, U.K.-Korea Joint Symposium on Bio-Technology, Feb 2005.

K. Samsudin, B. Cheng, A. R. Brown, S. Roy and A. Asenov, “Impact of body thickness fluctuation in nanometre scale UTB SOI MOSFETs on SRAM cell functionality”, 6th European Conference on Ultimate Integration of Silicon (ULIS05), April 2005.

K. Samsudin, B. Cheng, A. R. Brown, S. Roy and A. Asenov, “UTB SOI SRAM Cell Stability under the Influence of Intrinsic Parameter Fluctuation”, Proc. ESSDERC, pp.553-556, September 2005.

K. Samsudin, B. Cheng, A. R. Brown, S. Roy and A. Asenov, “Impact of Random Dopant Induced Fluctuations on Sub-l5nm UTB SOI 6T SRAM Cells”, IEEE International SOI Conference, 2005.

N. H. Hamid, A. F. Murray, D. I. Laurenson and S. Roy, “Probabilistic computing with future deep sub-micrometer MOSFETs: A modelling approach”, 2005 IEEE International Symposium on Circuits and Systems (ISCAS2005), pp.2510-2513, May 2005.

K. Kalna, K. Elgaid, I. Thayne and A. Asenov, “Modelling of InP HEMTs with high Indium content channels”, Proc. Indium Phosphide and Related Materials Conf., pp.61-65, 2005.

K. Kalna, L. Yang and A. Asenov, “Fermi-Dirac statistics in Monte Carlo simulations of InGaAs MOSFETs”, Proc. 14th International Conference on Hot Carriers in Semiconductors (HCIS14), pp.24, 2005.

A. J. Garcia Loureiro, K. Kalna and A. Asenov, “New sources of intrinsic parameter fluctuations introduced by a high-k gate dielectric in sub-100 nm Si MOSFETs”, AIP Conf. Proc. 18th ICNF, pp.239-242, 2005.

A. R. Brown, J. R. Watling, A. Asenov, G. Bersuker and P. Zeitzoff, “Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-k gate stack materials”, Proc. 2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp.27-30, 2005.

C. Millar, A. Asenov, A. R. Brown and S. Roy, “Simulating the Bio-Nano-CMOS Interface”, IEEE Transactions on Nano-Technology, IEEE-NANO 05, pp.325-328, July 2005.

N. Seoane, A. J. Garcia Loureiro, K. Kalna and A. Asenov, “Discrete doping fluctuations in the delta layer of a 50 nm InP HEMT”, Proc. Modeling and Simulation of Electron Devices, pp.78-79, July 2005.

N. Seoane, A. J. Garcia Loureiro, K. Kalna and A. Asenov, “Indium content fluctuations in the channel of a 120 nm PHEMT”, Book of Extended Abstracts, ICNP7/SIMD5, pp.135, December 2005.

M. Bescond, N. Cavassilas, K. Kalna, K. Nehari, J. L. Autran, M. Lannoo and A. Asenov, “Simulation study of performance limits for Si, Ge, and GaAs ballistic nanowire MOSFETs”, Proc. Silicon Nanoelectronics Workshop (SNW 2005), Kyoto, Japan, pp.8-9, June 2005.

K. Kalna, L. Yang and A. Asenov, “Monte Carlo simulation of sub-100 nm InGaAs MOSFETs for Digital applications”, Proc 35th European Solid-State Device Research Conference (ESSDERC), pp.169-172, September 2005.

M. Bescond, N. Cavassilas, K. Kalna, K. Nehari, L. Raymond, J. L. Autran, M. Lannoo and A. Asenov, “Balistic transport in Si, Ge and GaAs Nanovire MOSFETs”, International Electron Device Meeting (IEDM) Tech. Dig., pp.526-529, December 2005.

M. Bescond, N. Cavassilas, L. Raymond and A. Asenov, “Effective masses in arbitrary oriented ballistic nanowire MOSFETs”, Proc. 14th International Conference on Hot Carriers in Semiconductors (HCIS14), July-August 2005.

C. Riddet, A. R. Brown, C. Alexander, J. R. Watling, S. Roy and A. Asenov, “Impact of quantum confinement scattering on the magnitude of current fluctuations in double gate MOSFETs”, , pp.6-7, 2005; Proc. Silicon Nanoelectronics Workshop (SNW 2005).

B. Cheng, S. Roy, A. Martinez, S. Markov and A. Asenov, “Impact of Oxide Thickness Fluctuation on MOSFETs Gate Tunnelling”, Proc SSDM (Japan 2005), 2005.

G. Roy, F. Adamu-Lema, A. R. Brown, S. Roy and A. Asenov, “Simulation of combined sources of intrinsic parameter fluctuations in a real 35 nm MOSFET”, Proc 35th European Solid-State Device Research Conference (ESSDERC), pp.337-340, 2005.

G. Roy, F. Adamu-Lema, A. R. Brown, S. Roy and A. Asenov, “Intrinsic parameter fluctuations in conventional MOSFETs until the end of the ITRS”, Book of Extended Abstracts, ICNP7/SIMD5, pp.35, December 2005.

A. Asenov, “Nano CMOS devices and their integration in giga transistor chips”, Proc. Future of Integrated Systems (FIS Cambridge 2005), 2005.

A. Asenov, “Monte Carlo simulation of nanotransistors and giga circuits on HPC”, Proc. LSSC’05, Sosopol, Bulgaria, 2005.

J. R. Barker, “Quantised vortex flows and conductance fluctuations in high temperature atomistic silicon MOSFET devices”, Physics of Semiconductors: Proceedings of the 27th International Conference on the Physics of Semiconductors, pp.1493, 2005.

A. Barmpoutis and J. R. Barker, “ Self-organized Transportation System of Smart Dust Distributed Sensors”, Proceedings ICDSNS05: Innovations and Commercial Applications of Distributed Sensor Networks Symposia,, 2005.

A. Martinez, A. Svizhenko, M. P. Anantram, J. R. Barker, A. R. Brown and A. Asenov, “A study of the effect of interface roughness on a DG-MOSFET using full 2D NEGF technique”, IEDM 2005 Tech. Dig. pp. 627-630, 2005.

A. Martinez, A. Svizhenko, M. P. Anantram, J. R. Barker, A. R. Brown and A. Asenov, “ Impact of stray charges on the characteristics of nano-DGMOSFETs in the ballistic regime: A NEGF simulation study”, Proc. Silicon Nanoelectronics Workshop (SNW 2005) pp. 76 – 77, 2005.

A. Martinez, J. R. Barker, A. Svizhenko, M. P. Anantram, A. R. Brown, B. Biegel and A. Asenov, “The impact of Unintentional discrete charges in a nominally undoped channel of a thin body double gate MOSFETs: Classical to full quantum simulation,”, Book of Extended Abstracts, ICNP-7/SIMD-5, p. 81, Maui, Hawaii, 2005.

J. R. Barker, J. R. Watling, A. R. Brown, S. Roy, P. Zeitzoff, G. Bersuker and A. Asenov, “Monte Carlo study of couples SO phonon-plasmon scattering in Si MOSFETs with high-k dielectric gate stacks: hot electron and disorder effects”, 14th International Conference on Hot Carriers in Semiconductors (HCIS14), pp.TU 4-2, July 2005.

L. Yang, J. R. Watling, A. Asenov, J. R. Barker and S. Roy, “Sub-100nm strained Si CMOS: Device performance and circuit behavior”, 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), October 2004.

L. Yang, J. R. Watling, A. Asenov, J. R. Barker and S. Roy, “Device performance in conventional and strained Si MOSFETs with high-κ gate stack”, IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), September 2004.

L. Yang, J. R. Watling, J. R. Barker and A. Asenov, “The impact of soft-optical phonon scattering due to high-κ dielectrics on the performance of sub-100nm conventional and strained Si n-MOSFETs”, 27th International Conference on Physics of Semiconductors (ICPS04), July 2004.

L. Yang, J. R. Watling, R. C. W. Wilkins, J. R. Barker and A. Asenov, “Reduced interface roughness in sub-100nm strained Si n-MOSFETs - A Monte Carlo simulation study”, Proceedings of the 5th Europe Workshop on Ultimate Integration of Silicon (ULIS04), pp.23-26, April 2004.

L. Yang, J. R. Watling, F. Adamu-Lema, A. Asenov and J. R. Barker, “Scaling study of Si and strained Si n-MOSFETs with different high-k gate stacks”, 2004 International Electron Device Meeting (IEDM), December 2004.

B. Cheng, S. Roy, G. Roy, F. Adamu-Lema and A. Asenov, “Impact of Intrinsic Parameter Fluctuations in Decanano MOSFETs on Yield and Functionality of SRAM Cells”, ULIS 2004 Proceedings, 2004.

B. Cheng, S. Roy and A. Asenov, “Compact Model Strategy for Studying the Impact of Intrinsic Parameter Fluctuations on Circuit Performance”, MIXDES 2004 Proceedings, 2004.

B. Cheng, S. Roy and A. Asenov, “The Impact of Random Doping Effects on CMOS SRAM Cell”, ESSCIRC 2004 Proceedings, 2004.

K. Kalna, L. Yang, J. R. Watling and A. Asenov, “80 nm InGaAs MOSFET compared to equivalent Si transistor, Proceedings of ULIS 2004”, ULIS 2004 Proceedings, pp.159-162, 2004.

A. Asenov and K. Kalna, “Scaling the HEMT to sub-100nm dimensions: a simulation study”, Proceedings of Asian Pacific Microwave Conference APMC'04, 2004.

C. Alexander, A. R. Brown, J. R. Watling and A. Asenov, “Impact of scattering in 'atomistic' device simulation”, Proc. ULIS 2004, Leuven Belgium, pp.89-92, 2004.

A. Lee, A. R. Brown, A. Asenov and S. Roy, “RTS amplitudes in decanano n-MOSFETs with conventional and high-k gate stacks”, International Workshop on Computational Electronics (IWCE 10), pp.159-160, October 2004.

A. Lee, A. R. Brown, A. Asenov and S. Roy, “RTS amplitudes in decanano n-MOSFETs with conventional and high-k gate stacks”, International Conference on Solid State Devices and Materials (SSDM 2004), September 2004.

C. Riddet, A. R. Brown, C. Alexander, J. R. Watling, S. Roy and A. Asenov, “Scattering from body thickness fluctuations in double gate MOSFETs. An ab initio Monte Carlo simulation study”, , pp.194-195, 2004.

A. Asenov, G. Roy, C. Alexander, A. R. Brown, J. R. Watling and S. Roy, “Quantum mechanical and transport effects in resolving discrete charges in nano-CMOS device simulation”, IEEE Nano 2004 Conference, 2004.

C. Alexander, A. R. Brown, J. R. Watling and A. Asenov, “impact of Scattering on random dopant induced current fluctuations in decanano MOSFETs”, Simulation of Semiconductor Processes and Devices, pp.223-226, 2004.

C. Alexander, A. R. Brown, J. R. Watling and A. Asenov, “Impact of single charge trapping in nano-MOSFETs”, IEEE 2004 Silicon Nanoelectronics Workshop, pp.19, 2004.

F. Adamu-Lema, G. Roy, A. R. Brown, A. Asenov and S. Roy, “Intrinsic parameter fluctuations in conventional MOSFETs at the scaling limit:a statistical study”, IWCE 10, Book of Abstracts, pp.44-45, 2004.

J. R. Barker, “Quantum fluctuations in atomistic silicon and silicon-germanium semiconductor MOSFET devices”, IoP Condensed Matter and Materials Physics Conference (CMMP04), Warwick, pp.98, 2004.

A. R. Brown, F. Adamu-Lema and A. Asenov, “Intrinsic Parameter Fluctuations in UTB MOSFETs Induced by Body Thickness Variations”, Silicon Nanoelectronics Workshop, Kyoto, Japan, 8-9 June 2003.

S. Roy, B. Cheng, G. Roy and A. Asenov, “A methodology for introducing “atomistic” parameter fluctuations into compact device models for circuit simulation”, Extended abstracts of the International Workshop on Computational Electronics IWCE-9, 2003.

S. Roy, A. Lee, A. R. Brown and A. Asenov, “Application of quasi-3D and 3D MOSFET simulations in the atomistic regime”, Extended abstracts of the International Workshop on Computational Electronics IWCE-9, 2003.

L. Yang, A. Asenov, J. R. Watling, M. Boriçi, J. R. Barker, S. Roy, K. Elgaid, I. Thayne and T. Hackbarth, “Optimizations of sub-100nm Si/SiGe MODFETs for high linearity RF applications”, Proceedings of the 2003 IEEE Conference on Electron Device and Solid-State Circuits (EDSSC03), pp.331-334, December 2003.

L. Yang, A. Asenov, J. R. Watling, M. Boriçi, J. R. Barker, S. Roy, K. Elgaid, I. Thayne and T. Hackbarth, “A simulation study of high linearity Si/SiGe HFETs”, Proceedings of the 14th Workshop on Modelling and Simulation of Electron Device (MSED03), pp.41-44, October 2003.

L. Yang, J. R. Watling, M. Boriçi, R. C. W. Wilkins, A. Asenov, J. R. Barker and S. Roy, “Simulations of scaled sub-100nm strained Si/SiGe p-channel MOSFETs”, 9th IEEE International Workshop of Computational Electronics (IWCE), May 2003.

B. Cheng, S. Roy, G. Roy and A. Asenov, “Integrating 'atomistic', intrinsic parameter fluctuations into compact model circuit analysis”, ESSDERC 2003 Proceedings, pp.437-440, 2003.

A. J. Garcia Loureiro, K. Kalna, A. Asenov, R. C. W. Wilkins and J. M. Lopez-Gonzales, “Statistic 3D Simulations of Intrinsic Fluctuations in Nanoscaled PHEMTs”, Proceedings of the 14th Workshop on Modelling and Simulation of Electron Device (MSED03), pp.45-48, 2003.

D. A. J. Moran, K. Kalna, E. Boyd, F. McEwan, H. McLelland, L. L. Zhuang, C. Stanley, A. Asenov and I. Thayne, “ Self-aligned 0.12 μm T-gate In.53Ga.47As/In.52Ga.48As technology using a non-annealed ohmic contact strategy”, Proceedings of ESSDERC 2003, pp.315-318, 2003.

A. Lee, A. R. Brown, A. Asenov and S. Roy, “RTS noise simulations of decanano MOSFETs subject to atomic scale structure variations”, NPMS-6/SIMD-4 Book of Abstracts, pp.34-35, December 2003.

G. Roy, A. R. Brown, A. Asenov and S. Roy, “Bipolar quantum corrections in resolving individual dopants in “atomistic” device simulations”, NPMS-6/SIMD-4 Book of Abstracts, pp.34-35, Dec 2003.

W. Ma, S. Kaya and A. Asenov, “Study of RF linearity in sub-50 nm MOSFETs using simulations”, Extended abstracts of the International Workshop on Computational Electronics IWCE-9, 2003.

G. Roy, A. R. Brown, A. Asenov and S. Roy, “Quantum aspects of resolving discrete charges in “atomistic” device simulation”, Extended abstracts of the International Workshop on Computational Electronics IWCE-9, 2003.

C. Millar, A. Asenov and S. Roy, “ Brownian ionic channel simulation”, Extended abstracts of the International Workshop on Computational Electronics IWCE-9, 2003.

A. Asenov, “Modeling end-of-the roadmap transistors”, 203rd ECS Meeting, Paris, Meeting, Abstracts, pp.abstract no. 97, 2003.

J. R. Watling, A. Asenov, A. R. Brown, A. Svizhenko and M. P. Anantram, “Direct Source-to-Drain Tunnelling and its Impact on the Intrinsic Parameter Fluctuations in nanometre scale Double Gate MOSFETs”, Proc. Modeling and Simulation of Microsystems (MSM03), pp.202, 2003.

C. Millar, A. Asenov and S. Roy, “ Brownian Dynamics Based Particle Mesh Simulation of Ionic Solutions and Channels”, Proc. Modeling and Simulation of Microsystems (MSM03), pp.431, 2003.

C. Alexander, J. R. Watling and A. Asenov, “Artificial carrier heating due to the introduction of ab-initio Coulomb scattering in Monte Carlo simulations”, NPMS-6/SIMD-4 Book of Abstracts, pp.42-43, Dec 2003.

A. R. Brown, F. Adamu-Lema and A. Asenov, “Intrinsic parameter fluctuations in nanometer scale thin body SOI devices introduced by interface roughness”, NPMS-6/SIMD-4 Book of Abstracts, pp.32-33, Dec 2003.

S. Kaya, W. Ma and A. Asenov, “Design of DG-MOSFET's for High Linearity Performance”, Proc. SOI 2003, 2003.

W. Ma, S. Kaya and A. Asenov, “Scaling of RF Linearity in DG and SOI MOSFETs”, EDMO 2003, 2003.

A. Asenov, “Brownian approach to simulation of ionic solutions and ion permeation through protein channels”, Book of Abstracts, IVth IMACS Seminar on Monte Carlo Methods, Berlin 2003.

M. Boriçi, J. R. Watling, R. C. W. Wilkins, J. R. Barker and A. Asenov, “Interface roughness scattering and its impact on electrons transport in in relaxed and strained Si n-MOSFETs”, HCIS 13, Modena, Program and Abstracts, 2003.

C. Alexander, J. R. Watling and A. Asenov, “Small volume mobility variations due to Ionised impurity scattering”, HCIS 13, Modena, Program and Abstracts, Tu 3.7, 2003.

J. R. Watling, L. Yang, M. Boriçi, J. R. Barker and A. Asenov, “Degeneracy and high doping effects in deep sub-micron relaxed and strained SiGe MOSFETs”, Extended abstracts IWCE-9, Rome, 2003.

A. Asenov, A. R. Brown and J. R. Watling, “Modelling end-of-the-Roadmap transistors”, ULSI Process Integration, pp.306-321, 2003.

K. Kalna, L. Yang and A. Asenov, “Simulation study of high performance III-V MOSFETs for digital applications”, Proc. IWCE-9, Rome, 2003.

K. Kalna, M. Boriçi, L. Yang and A. Asenov, “Monte Carlo simulation of III-V MOSFETs”, Proc. 13th Hot Carriers in Semiconductors Conference, Modena, pp.Tu 3.14, 2003.

C. Millar, A. Asenov and S. Roy, “Brownian Dynamics Based Simulation Of Ionic Solutions And Channels”, Nanotech 2003: Technical Proceedings, 2003.

L. Yang, J. R. Watling, R. C. W. Wilkins, A. Asenov, J. R. Barker and S. Roy, “Simulation of scaled sub-100 nm strained Si p-channel MOSFETs”, Extended abstracts of the International Workshop on Computational Electronics IWCE-9, 2003.

C. Alexander, J. R. Watling and A. Asenov, “Mobility variations in ultra-small devices due to discrete charges”, Extended Abstracts IWCE-9, Rome 2003, 2003.

J. R. Barker, “Quantum hydrodynamics of normal vortices in open semiconductor quantum dots”, Physics of Semiconductors: Proceedings of the 26th International Conference on the Physics of Semiconductors, pp.231, 2003.

A. R. Brown, A. Asenov and J. R. Watling, “Intrinsic Fluctuations in Sub 10 nm Double-Gate MOSFETs Introduced by Discreteness of Charge and Matter”, Silicon Nanoelectronics Workshop, Honolulu, HI, 9-10 June 2002.

L. C. Chirwa, P. A. Hammond, S. Roy and D. R. S. Cumming, “Electromagnetic radiation from ingested sources in the human intestine”, 2nd Annual International IEEE EMBS Special Topic Conference on Microtechnologies in Medicine and Biology, 2002.

S. Roy, J. Trinder and J. Magill, “Portable learning and assessment - towards ubiquitous education”, European Workshop on Mobile and Contextual Learning - mLearn 2002, June 2002.

L. Yang, J. R. Watling, R. C. W. Wilkins, A. Asenov, J. R. Barker, S. Roy and T. Hackbarth, “Scaling study of Si/SiGe MODFETs for RF applications”, Proceeding of the 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO02), pp.101-106, 2002.

C. Millar and A. Asenov, “Multiscale Particle-Mesh Ion Channel Simulations”, Workshop on Ion Channels, May 2002.

K. Kalna and A. Asenov, “Gate tunnelling and impact ionisation in sub 100 nm PHEMTs”, Proceedings of SISPAD2002, pp.139-142, 2002.

K. Kalna and A. Asenov, “Breakdown mechanisms limiting the operation of double doped PHEMTs scaled into sub-100 nm dimensions”, Proceedings of ASDAM 2002, pp.141-144, 2002.

K. Kalna and A. Asenov, “Tunnelling and impact ionization in scaled double doped PHEMTs”, Proceedings of ESSDERC 2002, pp.303-306, 2002.

K. Kalna and A. Asenov, “Balllistic transport in decanano PHEMTs”, Proceeding of 13th Workshop on Physical Simulation of Semiconductor Devices, pp.1-5, 2002.

K. Kalna, L. Yang and A. Asenov, “High performance III-V MOSFETs: a dream close to reality?”, Proceedings of EDMO 2002, pp.243-248, 2002.

S. Kaya, A. Asenov and S. Roy, “Breakdown of universal mobility curves in sub-100 nm MOSFETs”, Proceedings of the Silicon Nanoelectronics Workshop, 2002.

J. R. Watling, A. R. Brown, A. Asenov, A. Svizhenko and M. P. Anantram, “Simulation of Direct Source-to-Drain Tunnelling Using the Density Gradient Formalism: Non-equilibrium Green's Function Calibration”, Proc. SISPAD 2002, IEEE Cat. no. 02TH8621, pp.267-270, 2002.

A. Asenov, M. Jaraiz, S. Roy, G. Roy, F. Adamu-Lema, A. R. Brown, V. Moroz and R. Gafiteanu, “Integrated Atomistic Process and Device Simulation of Decananometre MOSFETs”, Proc. SISPAD 2002, IEEE Cat. no. 02TH8621, pp.87-90, 2002.

A. Asenov, “Simulation of intrinsic fluctuations in decanano MOSFETs: present status and future challenges”, Proc. Solid State Devices and Materials (SSDM 2002), 2002.

A. Asenov, A. R. Brown and J. R. Watling, “Quantum Corrections in the Simulation of Decanano MOSFETs”, 3rd European Workshop on ULtimate Integration of Silicon (ULIS 2002), 2002.

A. Asenov, A. R. Brown and J. R. Watling, “The Use of Quantum Potentials for Confinement in Semiconductor Devices”, Modeling and Simulation of Microstructures (MSM 2002), 2002.

A. R. Brown, S. Kaya, A. Asenov, J. H. Davies and T. Linton, “Statistical Simulation of Line Edge Roughness in Decanano MOSFETs”, Silicon Nanoelectronics Workshop, Kyoto, Japan, 10-11 June 2001.

K. Kalna and A. Asenov, “Multiple delta doping in aggressively scaled PHEMTs”, Proceedings of ESSDERC 2001, pp.380-384, 2001.

S. Kaya, A. R. Brown, A. Asenov, D. Magot and T. Linton, “Analysis of Statistical Fluctuations Due to Line Edge Roughness in Sub-0.1μm MOSFETs”, Simulation of Semiconductor Processes and Devices (SISPAD 2001), pp.78-81, 2001.

J. R. Watling, A. R. Brown, A. Asenov and D. K. Ferry, “Quantum Corrections in 3-D Drift Diffusion Simulation of Decanano MOSFETs Using an Effective Potential”, Simulation of Semiconductor Processes and Devices (SISPAD 2001), pp.81-85, 2001.

A. Asenov, “3D Statistical Simulation of Intrinsic Fluctuations in Decanano MOSFETs Induced by Discrete Dopants, Oxide Thickness Fluctuations and LER”, Simulation of Semiconductor Processes and Devices (SISPAD 2001), pp.162-169, 2001.

M. Palmer, G. Braithwaite, M. J. Prest, E. H. C. Parker, T. E. Whall, Y. P. Zhao, S. Kaya, J. R. Watling, A. Asenov, J. R. Barker, A. M. Waite and A. G. R. Evans, “Enhanced Velocity Overshoot and Transconductance in Si/SiGe/Si pMOSFETs - Prediction for Deep Submicron Devices”, Proc. ESSDERC, pp.199-202, 2001.

C. Millar, A. Asenov and J. R. Watling, “Excessive Over-Relaxation Method, for Multigrid Poisson Solvers”, Proceedings of the International Workshop on Computational Electronics IWCE01, 2001.

S. Kaya, A. Asenov and S. Roy, “Breakdown of universal mobility curves in sub-100nm MOSFETs”, Proceedings of the International Workshop on Computational Electronics IWCE01, 2001.

C. Millar, A. Asenov, S. Roy and J. M. Cooper, “Generic Particle-Mesh Framework for the Simulation of Ionic Channels”, Proceedings of the International Workshop on Computational Electronics IWCE01, 2001.

A. R. Brown, J. R. Watling and A. Asenov, “A 3-D Atomistic Study of Archetypal Double Gate MOSFET Structures”, Proceedings of the International Workshop on Computational Electronics IWCE01, 2001.

A. Asenov and S. Kaya, “Effect of oxide roughness on the threshold voltage fluctuations in decanano MOSFETs with ultrathin gate oxide”, Proceedings of SISPAD'00, pp.135-138, 2000.

K. Kalna, A. Asenov, K. Elgaid and I. Thayne, “Performance of aggressively scaled pseudomorphic HEMTs: A Monte Carlo study”, Proceedings of ASDAM 2000, pp.55-58, 2000.

K. Kalna, S. Roy, A. Asenov, K. Elgaid and I. Thayne, “RF analysis of aggressively scaled pHEMTs”, Proceedings of ESSDERC 2000, pp.156-159, 2000.

K. Kalna, A. Asenov, K. Elgaid and I. Thayne, “Effect of impact ionization in scaled pHEMTs”, Proceedings of EDMO2000, pp.236-241, 2000.

A. Asenov, R. Balasubramaniam, A. R. Brown, J. H. Davies and S. Saini, “Random Telegraph Signal Amplitudes in Sub 100nm (Decanano) MOSFETs: a 3D Atomistic Simulation Study”, IEDM Tech. Digest, pp.279-282, 2000.

Y. P. Zhao, S. Kaya, J. R. Watling, A. Asenov, J. R. Barker, M. Palmer, G. Braithwaite, T. E. Whall and E. H. C. Parker, “Indication of Non-equilibrium Transport in SiGe p-MOSFETs”, Proc. ESSDERC, pp.224-227, 2000.

J. R. Watling, J. R. Barker and A. Asenov, “Soft sphere model for electron correlation and scattering in the atomistic modelling of semiconductor devices”, Proceedings of the International Workshop on Computational Electronics IWCE00, 2000.

J. R. Watling, Y. P. Zhao, A. Asenov and J. R. Barker, “Non-equilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs”, Proceedings of the International Workshop on Computational Electronics IWCE00, 2000.

A. Asenov, “Quantum correction to the “atomistic” MOSFET simulation”, Proceedings of the International Workshop on Computational Electronics IWCE00, 2000.

A. Asenov, “Atomistic simulation of decanano devices”, Proceedings of ChiPPS 2000 Wandlitz, Germany, 2000.

S. Roy, S. Kaya, A. Asenov and J. R. Barker, “RF analysis methodology for Si and SiGe FETs based on transient Monte Carlo simulations”, Proceedings of SISPAD'99, 1999.

K. Kalna, C. Y. L. Cheung and K. A. Shore, “Carrier transport effects on the dynamics of intersubband semiconductor lasers”, Proceedingsof IOP National Quantum Electronics conference (EQ14), September 1999.

K. Kalna, C. Y. L. Cheung, I. Pierce and K. A. Shore, “Self-consistent analysis of carrier transport and capture dynamics in quantum cascade intersubband semiconductor lasers”, Proceedings of Advanced Semiconductor Lasers & Applications Optical Society of America (ASLA99), 1999.

K. Kalna, C. Y. L. Cheung and K. A. Shore, “Carrier transport and capture dynamics in quantum cascade semiconductor lasers”, Proceedings of Semiconductor and Integrated Optoelectronics (SIOE99), April 1999.

A. Asenov and S. Saini, “Influence of the Polysilicon gate on the random dopant induced threshold voltage fluctuations in sub 100 nm MOSFETs with thin gate oxides”, Proc. ESSDERC'99, pp.188-191, 1999.

A. Asenov, G. Slavcheva, A. R. Brown and J. H. Davies, “Quantum Mechanical Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations and Lowering in Sub 0.1 micron MOSFETs”, IEDM Tech. Digest, pp.535-538, 1999.

A. Asenov, “Hierarchical Statistical 3D 'Atomistic' Simulation of Decanano MOSFETs: Drift-Diffusion, Hydrodynamic and Quantum Mechanical Approaches”, Proceedings of 3rd NASA Device Modeling Workshop, August 1999.

A. Asenov, “Efficient 3D “atomistic” simulation technique for studying of random dopant induced threshold voltage lowering and fluctuations in decanano MOSFETs”, Proceedings of the International Workshop on Computational Electronics IWCE98, pp.236-266, 1998.

S. Roy, S. Kaya, S. Babiker, A. Asenov and J. R. Barker, “Monte Carlo investigation of optimal device architectures for SiGe FETs”, Proceedings of the International Workshop on Computational Electronics IWCE98, pp.210-213, 1998.

S. Babiker, A. Asenov, S. Roy, J. R. Barker and S. P. Beaumont, “Strain engineered InxGa1-xAs channel pHEMTs on virtual substrates: A Simulation study”, Proceedings of the International Workshop on Computational Electronics IWCE98, pp.178-181, 1998.

A. Asenov, A. R. Brown and S. Roy, “Parallel semiconductor device simulation: from power to atomistic devices”, Proceedings of the International Workshop on Computational Electronics IWCE98, 1998.

Z. Borsosfoldi, D. R. Webster, I. Thayne, A. Asenov, D. G. Haigh and S. P. Beaumont, “Ultralinear pseudomorphic HEMTs for wireless comunications: A simulation study”, Institute of Physics Conference Series, pp.475-478, 1998.

A. Asenov, “Random dopant threshold voltage fluctuations in 50 nm epitaxial channel MOSFETs: A 3D 'atomistic' simulation study”, Proc. ESSDERC'98, pp.300-303, 1998.

A. Asenov, “Statistically reliable 'Atomistic" simulation of sub 100nm MOSFETs”, Simulation of Semiconductor Processes and Devices, pp.223-226, 1998.

J. R. Watling, A. Asenov and J. R. Barker, “Efficient hole transport model in warped bands for use in the simulation of Si/SIGe MOSFETs”, Proceedings of IWCE 98, IEEE Cat. NO. 98EX116, pp.96-99, 1998.

S. Roy, A. Asenov, S. Babiker, J. R. Barker and S. P. Beaumont, “RF performance of strained Si MODFETs and MOSFETs on ‘virtual’ SiGe substrates: A Monte Carlo study”, Proceedings of ESSDERC97, pp.192-195, 1997.

J. R. Barker, S. Roy, S. Babiker and A. Asenov, “Circuit and architecture issues for single-electron devices”, Proceedings of the International Conference on Quantum Devices and Circuits, pp.233-241, 1997.

A. Asenov, A. R. Brown, S. Roy, C. R. Arokianathan, J. H. Davies and J. R. Barker, “Parallel 3D Simulation of Semiconductor Devices”, Proc. Second NASA Device Modeling Workshop, Ames, pp.85-99, 1997.

S. Babiker, A. Asenov, N. Cameron and S. P. Beaumont, “The Ultimate Pseudomorphic HEMT on GaAs Substrate”, Proc. M & RF Conference, London, pp.198-203, 1997.

S. Roy, A. Asenov and J. R. Barker, “Optimum Partitioning of Topologically Rectangular Grids”, Proc. Int. Conf. HPSN Challenges in Telecomp and Telecom: Parallel Simulation of Complex Systems and Large-Scale applications (EUROSIM’96), pp.179-185, 1996.

A. Asenov, S. Babiker, N. Cameron, M. R. S.Taylor and S. P. Beaumont, “Impact of Gate Recess Offset on Pseudomorphic HEMT performance: a Simulation Study”, Proceedings of ESSDERC 96, pp.1016, 1996.

A. Asenov, “Monte Carlo Simulation of Geometry and Surface Effects on the Performance of 0.1micron pHEMTs”, Proceedings of Advanced Heterojunction Workshop Kona, Hawaii (1996), 1996.

A. Asenov, A. R. Brown, S. Roy and J. R. Barker, “Topically Rectangular Finite Element Grids in the Parallel Simulation of Semiconductor Devices”, Proc. Computational Mechanics in UK, 4th ACME Annual Conference, pp.49-52, 1996.

A. R. Brown, A. Asenov, S. Roy and J. R. Barker, “Parallel 3D finite element power semiconductor device simulator based on topologically rectangular grid”, Simulation of Semiconductor Devices and Processes, pp.336-339, 1995.

A. Asenov and C. Stanley, “A virtual IC factory in an undergraduate semiconductor device fabrication laboratory”, Proceedings of EUROSIM Congress 95, pp.1311-1316, 1995.

S. Babiker, N. Cameron, A. Asenov and S. P. Beaumont, “New evidence for velocity overshoot in a 200 nm Pseudomorphic HEMT”, Proceedings of ESSDERC95, pp.173-176, 1995.

S. Babiker, A. Asenov, J. R. Barker and S. P. Beaumont, “Finite element Monte Carlo simulation of recess gate FETs”, Simulation of Semiconductor Devices and Processes, pp.226-229, 1995.

K. Kalna, M. Mosko and F. M. Peeters, “Electron-electron scattering induced capture in GaAs quantum wells”, Proceeding of 9-UFPS Symposium, pp.435-439, 1995.

A. Asenov, S. Babiker, N. Cameron, S. P. Beaumont and J. R. Barker, “Design of properly scaled 100nm pseudomorphic HEMT using H2F”, IEE Colloquium on Physical Modeling of Semiconductor Devices, Digest No 1995/064, pp.7/1 - 7/6, 1995.

A. R. Brown, A. Asenov, J. R. Barker, P. Waind and D. E. Crees, “Calibration of the numerical simulations in the design of high temperature IGBTs”, Proc. 2nd International Seminar on Power Semiconductors (ISPS'94), Czech Technical University in Prague, pp.151-157, 1994.

J. R. Barker, A. Asenov, A. R. Brown, J. Cluckie, S. Babiker and C. R. Arokianathan, “Parallel simulation of semiconductor devices”, Massively Parallel Processing, Applications and Development, pp.683-690, 1994.

A. Asenov, J. R. Barker, A. R. Brown and G. L. Lee, “Scalable parallel 3D finite element nonlinear Poisson solver”, Massively Parallel Processing, Applications and Development, pp.665-672, 1994.

A. Asenov, J. R. Barker and A. R. Brown, “Parallel 3D finite element simulation of nano-structured devices”, Proc. NASECODE X, Dublin, pp.52-53, 1994.

N. Cameron, A. Asenov, S. Ferguson, M. R. S.Taylor, M. C. Holland and S. P. Beaumont, “Reduced short channel effects in selectively dry gate recessed p-doped buffered pseudomorphic HEMTs”, Proc. of the European Gallium Arsenide and Related III-V Compounds Application Symposium, Torino, pp.111-114, 1994.

A. Asenov, N. Cameron, M. R. S.Taylor, S. P. Beaumont and J. R. Barker, “Numerical simulation of the series resistances in deep - submicrometer recess gate MESFETs”, Proc. of the European Gallium Arsenide and Related III-V Compounds Application Symposium, Torino, pp.373-376, 1994.

A. R. Brown, A. Asenov, J. R. Barker, S. Jones and P. Waind, “Numerical simulation of IGBTs at elevated temperatures”, Proc. International Workshop on Computational Electronics, pp.50-55, 1993.

A. R. Brown, D. Reid, A. Asenov and J. R. Barker, “The implementation and speed-up of coloured SOR methods for solving 3D Poisson equation on an array of transputers”, Proc. International Workshop on Computational Electronics, pp.173-176, 1993.

S. Babiker, J. R. Barker and A. Asenov, “Queuing-theoretic simulation of single-electronic metal-semiconductor devices and systems”, Proceedings of the International Workshop on Computational Electronics IWCE93, pp.260-264, 1993.

S. Roy, J. R. Barker and A. Asenov, “System simulation tools for single-electronic devices”, Proceedings of the International Workshop on Computational Electronics IWCE93, pp.275-279, 1993.

A. Asenov, D. Reid, J. R. Barker, N. Cameron and S. P. Beaumont, “Finite element simulation of recess gate MESFETs and HEMTs. The Simulator H2F”, Simulation of Semiconductor Processes and Devices, pp.265-268, 1993.

A. Asenov, D. Reid and J. R. Barker, “The implementation and speed-up of coloured SOR methods solving 3D problems on array transputers”, Transputer Applications and Systems, pp.578-587, 1993.

A. Asenov, D. Reid, J. R. Barker, N. Cameron and S. P. Beaumont, “Parallel Simulation of Semiconductor Devices on MIMD Machines”, Proc. International Workshop on Computational Electronics, pp.50-55, 1993.

J. R. Barker, J. M. Weaver, S. Babiker and S. Roy, “On the theory, modelling and construction of single electronic systems”, Proceedings of the International Symposium on New Phenomena in Mesoscopic Structures, December 1992.

A. Asenov and D. Reid, “Theoretical Study of the Effect of HEMT Gate Recess on MESFET and HEMT Characteristics”, Proceedings of CMMP 92, pp.128, 1992.

E. Stefanov, F. Koch, A. Asenov, U. Meiners and H. Brugger, “The In-Plane Gate Transistor: Device Simulation, Design and Test of the IPG”, Extended Abstracts of the 1992 Int. Conf. on Solid State Devices and Materials, pp.759-761, 1992.

P. Chistman, M. Bernauer, A. Asenov, C. Wetzel, B. K. Meyer and A. Endros, “Spin Dependent Recombination at Deep Centers in Si-Electrically Magnetic Resonance”, Proc. Int. Conf. Defects in Semiconductors, pp.1165-1170, 1991.

A. Asenov, J. Berger, P. Speckbacher, F. Koch and W. Weber, “Spatially - Resolved Measurements of Hot-Carrier Generated Defects at the Si-SiO2 Interface”, Proc. INFOS’91, pp.247, 1991.

I. Malinovska, A. Asenov and I. Nachev, “Quasi-Hydrodynamical 2D Submicrometer MOSFET Simulator”, Proc. VIII Microelectronics Conference, 1990.

D. Asenova and A. Asenov, “Numerical Modelling of Image Formation for Defect Visualisation Using EBIC”, Proc. ISPPM, pp.287, 1989.

I. Nachev, V. Nikoltchovsky and A. Asenov, “A Precise and Easy to Use Method For Optimization of Model Parameters of Semiconductor Devices”, Proc ISPPM, pp.287, 1989.

A. Asenov and E. Stefanov, “IMPEDANCE 2.0: - A Flexible concept for Process and Device Simulation”, Proc. ISPPM, pp.272, 1989.

A. Asenov, M. Bollu and F. Koch, “Simple Model of Hot Carriers Modified MOSFET”, INFOS'89 Hot Electrons Siemens Workshop, 1989.

E. Stefanov and A. Asenov, “A Fast and Economical Method for Solution of Coupled System of Non-Linear 2-D Diffusion Equation”, Proc. MIEL-88, Yugoslavia, 1988.

R. Schwarz, A. Asenov, S. Goedecker and E. Chitate, “Carrier Diffusion and Drift in s-Si:H Shottky Barrier Devices”, Proc. 8th ECPV Conf., Florence, 1988.

F. Koch, M. Bollu and A. Asenov, “Hot Carriers, Degradation and Noise in Microstructured Devices, Meeting: Low Energy Excitation in Low Dimensional System”, Innsbruck, 1987.

A. Asenov, E. Stefanov, P. Vitanov and V. Nikoltchovsky, “MOS Process and Devices Modeling for VLSI IC”, Proc. FENTO Int. Conf., pp.225, 1986.

E. Stefanov, A. Asenov and V. Nikoltchovsky, “Numerical Analysis of Narrow Channel MOS Transistor”, Proc. FENTO Int. Conf., pp.209, 1986.

V. Nikoltchovsky, A. Asenov and E. Stefanov, “Capacitance component extraction of diffusion line”, Proceedings of TNTM Conference, pp.168, 1985.

A. Asenov and E. Stefanov, “Numerical Simulation of Tecnological Processes and Devices for VLSI MOS IC”, Proc. II Int. School of New Technologies., pp.127, 1985.

A. Asenov, E. Stefanov, B. Antov and P. Vitanov, “A Two Dimensional Simulation of MOS Process and Analysis of Non-planar Devices”, Proc. ISPPM, Varna, pp.630, 1985.

A. Asenov, E. Stefanov, B. Antov and P. Vitanov, “IMPEDANCE: A Two Dimensional Simulator of MOS Process and Nonplanar Devices”, Proc. MIEL-85, Yugoslavia, 1985.

B. Antov, A. Asenov and E. Stefanov, “MOS Process and Device Simulation on Desktop Computer”, Proc. MIEL-84, 1984.

A. Asenov, “Calculation of MOS Transistor Threshold Voltage Shift due to Ion Implantation”, Proc. 26 Internationales Wissenschaftliches Kolloquium, Technische Hochschule Ilmenau,, pp.35, 1981.

P. Vitanov, L. Popova, B. Lasarova, G. Beshkov and A. Asenov, “Memory Behavior of NMOS Devices”, Proc. National Conf. Semiconductor Memory Devices., pp.3, 1980.

C. Millar, “3D Simulation Techniques For Biological Ion Channels”, University of Glasgow, 2004.

A. Asenov, “Modeling of Two Dimensional Effects in Integrated MOS Devices”, University of Sofia, 1988.

C. Millar and A. Asenov, “Modelling Ion Channels: The Engineers Approach”, IOP Electrostatics 2003, Abstracts, March 2003.

M. McAlpine, J. Magill, S. Roy, J. Trinder and D. Whittington, “A dynamic resource for on-line formative assessment in engineering”, Proceedings of ALT-C, September 2001.

A. Asenov, S. Roy and J. R. Watling, “SiGe for RF applications”, IEE Colloquium Advances in Semiconductor Devices, January 1999.

S. Roy, A. Asenov, A. R. Brown and J. R. Barker, “Partitioning of Topologically Rectangular Finite Element Grids”, Proc. Computational Mechanics in UK, 4th ACME Annual Conference, pp.41-44, 1996.

A. R. Brown, A. Asenov, S. Roy and J. R. Barker, “Development of a parallel 3D finite element power semiconductor device simulator”, IEE Colloquium on Physical Modeling of Semiconductor Devices, Digest No. 1995/064, pp.2/1-2/6, 1995.

A. Asenov and C. Stanley, “CAESAR: A virtual IC factory in an undergraduate semiconductor device fabrication laboratory”, IEE Colloquium on Physical Modeling of Semiconductor Devices, pp.10/1-10/6, 1995.

A. Asenov and M. E. Raikh, “Coulomb Blockade of Hopping Transport Through a Disordered Barrier”, Proceedings of CMMP 92, pp.234, 1992.

A. Asenov and E. Stefanov, “Numerical Optimization of Doping Profile and Threshold Voltage in MOS Transistors”, Proc. Inst. of Microelectron., pp.71, 1984.

E. Pelovska and A. Asenov, “Static Models of MOS Transistors for CAD of Large MOS IC”, Proc. Inst. of Microelectron., pp.55, 1984.

A. Asenov, “Adapter-Predictor Model of Short Channel MOS Transistor”, Proc. Inst. of Microelectron., 1982.

A. Asenov, P. Vitanov and T. Dimitrova, “Operative correction of Threshold Voltage in P-channel MOS Technology”, Proc. Inst. of Microelectron., 1982.

A. Asenov, “An Integrated Two-Dimensional CMOS Simulator”, IMPOT 2.0 - Description, No. 1.B713.00014-01, , 1988.

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