Grants
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Investigators |
Collaborators |
Collaborators |
| EPSRC
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ENIAC MOdeling and DEsign of Reliable, process variation-aware Nanoelectronic devices, circuits and systems (MODERN) | £727,166 | 10/2009 09/2012 |
A. Asenov S. Roy |
IUNET + 6 Europen Univ. |
19 EU companies |
| EPSRC
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Renaissance Germanium | £434,193 | 05/2008 10/2011 |
A. Asenov J. Watling |
Warwick Shefield |
IMEC |
| EU FP7
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REALITY | £250,039 | 01/2008 7/2010 |
A. Asenov S. Roy |
IMEC KU Leuven University of Bologna |
ARM ST Microelectronics |
| EU FP7
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NANOSIL | £76,000 | 01/2008 12/2010 |
A. Asenov S. Roy J. Barker J. Watling K. Kalna |
28 European groups | |
| EU FP7
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DUALLOGIC | £265,528 | 01/2008 12/2010 |
A. Asenov I. Thayne K. Kalna |
NCSR Demokritos IMEC KU Leuven |
IBM CEA ST Microelectronics NXP Semiconductors AIXTRON |
| EPSRC
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III-V MOSFETs for Ultimate CMOS | £3,991,903 | 06/2007 09/2010 |
I. Thayne
S. Thoms A. Asenov J.R. Barker A. Craven J.H. Davies A.R. Long C. Stanley J.M.R. Weaver D. MacIntyre S. Roy K. Kalna M. MacKenzie H. Zhou |
Freescale | |
| EPSRC Platform Grant
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Atomic Scale Simulation of Nanoelectronic Devices | £1,218,409 | 10/2007 09/2012 |
A. Asenov
J. R. Barker S. Roy J. Watling K. Kalna |
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| EPSRC
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Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors | £93,448 | 09/2006 06/2010 |
A. Asenov | QinetiQ
Renishaw Selex Sensors & Airborne Systems | |
| EC FP6
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PULLNANO IP | €257,666 | 05/2006 11/2008 |
A. Asenov
S. Roy J. R. Watling |
6 Univ. Partners | STMicroelect.
Infineon Philips |
| EPSRC
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Meeting the design challenges of nano-CMOS electronics | £1,969,890 | 10/2006 09/2010 |
A. Asenov
R. Sinnot S. Roy D. Cumming |
National e-Science Centre
Edinburgh Manchester York Southampton |
Fujitsu
Wolfson Microelectronics ARM Synopsys Freescale Semiconductor |
| EPSRC Advanced Research Fellowship
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Modelling of Carrier Transport in Ultra Thin Body Transistors | £528,051 | 10/2006 09/2011 |
K. Kalna | ||
| EPSRC
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UK Support for European Doctoral Level School in Device Modelling | £17,574 | 07/2005 09/2005 |
S. Roy
A. Asenov |
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| EPSRC
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Statistical 3D Simulation of Intrinsic Parameter Fluctuations in Decanoneter MOSFETs Introduced by Discreteness of Charge and Matter | £115,336 | 03/2005 03/2007 |
A. Asenov
J. R. Barker S. Roy J. R. Watling |
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| International Sematech
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Modelling the impact of high-k gate stacks on mobility device performance and intrinsic parameter fluctuations | $310,000 US | 09/2004 08/2006 |
J. Watling
A. Asenov S. Roy J. Barker |
UCL | International Sematech |
| EPSRC Advanced Research Fellowship
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The Impact of Interface Roughness and Self-Heating on the Performance of Nano-Scale MOSFETs | £229,068 | 09/2004 08/2009 |
J. Watling | ||
| EPSRC
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NETWORK:Silicon Research and Exploration For the Nanotechnology Era | £60,418 | 07/2004 06/2005 |
A. Asenov | Newcastle
+11 |
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| EPSRC
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Meeting the material challenges of nano-CMOS electronics | £354,711 | 07/2004 06/2008 |
A. Asenov
J. Barker S. Roy |
UCL | NASA
SEMATECH Synopsys IBM |
| Fujitsu
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Simulation of UTB SOI devices | £30,000 | 01/2004 12/2006 |
A. Asenov
S. Roy |
Fujitsu | |
| European Commission
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SINANO - Network of Excellence | €250,000 | 01/2004 12/2007 |
A. Asenov
S. Roy J. Barker |
include IMEC, LETI, etc. | Infinion, ST Microelectronics |
| EPSRC
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Sub 100 nm III-V MOSFETs for Digital Applications | £3,260,551 | 09/2003 09/2006 |
I. Thayne
A. Asenov J. Weaver +12 |
Surrey | Motorola |
| EPSRC - Platform Grant
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Atomistic Simulation of Nanoscale Devices | £429,564 | 06/2002 05/2007 |
A.Asenov
J.R.Barker S.Roy |
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| EPSRC - JREI
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Advanced Simulation of Nano-Bioelectronic Systems and Devices | £426,723 | 3 years | A.Asenov
H.Morgan J.Cooper N.Green S.Roy |
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| IBM - SUR
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Intrinsic Fluctuations in Decanano Silicon Devices: Impact on Scaling, Device Architecture, and Circuit Performance | $1,000,000 | 3 years | A.Asenov | IBM | |
| EPSRC | IRC in Bio-Nanotechnology | £9,741,682 | 6 years | J.Cooper
A.Asenov J.Weaver C.Wilkinson H.Morgan D.Cumming |
Oxford
Southampton Cambrige Nottingham York |
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| EPSRC | Understanding and Utilising Fluctuations in Systems of Deep Sub-micron MOS Devices | £350,000 | S.Roy
A.Asenov |
Edinburgh | Motorola | |
| EC-US | USE-ME: US - Europe Multistructural Education Alliance in Computer Science and Eng. | €149.850 | 09/2000
09/2003 |
D.Murray-Smith
A.Asenov S.Roy |
Uni. Hamburg
Vienna U Technol. Calif State U U. Nebraska Old Dom. U, VA |
EC
US |
| EPSRC | SiGe for MOS technologies, Phase II - Development and Applications | £4,700,000 | 07/2000
07/2003 |
J.R.Barker
A.Asenov I.Thayne S.Roy J.Watling |
Warwick,
Imperial Coll. Newcastle, Loughborough Southampton Sheffield |
Mitel
Avant! Siemens Daimler-Chr. |
| Scottish Enterprise
Proof of Concept |
Demonstration of the feasibility of integrating organo-metalic films in CMOS technology | £60,000 | 06/2000 06/2002 |
A.Asenov | Edinburgh
Dundee |
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| NASA
(Pending) |
Parallel Algorithms and Applications for Information Power Grid | $450,000 | 3 year | A.Asenov | NAS System Division,
NASA |
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| NASA | Supplement to support IWCE-7 | $30,000 | 05/2000 | A.Asenov | NAS System Division, NASA Ames Res. Ctr. | |
| EPSRC | Nanofabrication Technologies driven by high speed devices | £2,040,918 | 04/2000 03/2003 |
C.Wilkinson
A.Asenov I.Thayne J.R.Barker C.Stanley A.Long J.Davies J.Weaver |
GMMT | |
| SHEFC | VIDEOS - Virtual Interactive Design of Electronics and Optoelectronics Systems | £650,313 | 10/1999 9/2002 |
D.Hutchings
A.Asenov J.Arnold J.Davies |
Strathclyde | |
| NASA | Parallel Finite Element Simulation of Atomistic Effects in Sub-0.1 Micron Devices | $375,000 | 07/1998 10/2000 |
A.Asenov,
J.H.Davies |
NAS System Division, NASA Ames Res. Ctr. | |
| EPSRC | SiGe for MOS Technologies | £2,300,000 | 10/1997 09/2000 |
J.R.Barker
A.Asenov S.Beaumont I.Thayne |
Warwick,
Imperial Coll. Newcastle, Loughborough Southampton Sheffield |
Avant!
Mitel DERA |
| EPSRC | Nanoelectronics Technology and Ultrafast Devices | £2,871,770 | 04/1996 03/2000 |
S.Beaumont
A.Asenov I.Thayne C.Wilkinson C.Stanley A.Long J.Davies J.Weaver |
GMMT | |
| EPSRC | IGDS MSc Programme in Advanced Silicon Processing and Manufacturing Technologies | £439,000 | 07/1998
06/2003 |
A.Asenov
C.Wilkinson S.Beaumont |
Edinburgh,
Heriot-Watt, UMIST, Southampton, Newcastle, Cardiff, Swansea, Liverpool |
NMI |
| ESA | High Linearity Mixer | £31,806 | 03/1997
02/1999 |
I.Thayne
S.Beaumont A.Asenov |
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| EPSRC | Ultralinear devices and circuits for microwave frequencies | £327,450 | 05/1997
04/2000 |
I.Thayne
A.Asenov C.Stanley J.Sewell S.Beaumont |
Univ. College,
London |
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| EPSRC | Parallel 3D finite element simulation of cellular power Semiconductor devices | £138,732 | 09/1995
09/1998 |
A.Asenov
J.R.Barker |
Loughborough | GEC Plessey Semiconductors |
| Fac. Eng GU | Establishment of Microelectronics Process and Device Simulation Centre | £51,000 | 10/1996
09/1997 |
A.Asenov,
C.Stanley |
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| EPSRC | Simulation and optimisation of SiGe FETs for high speed VLSI applications | £84,000 | 10/1995
10/1997 |
J.R.Barker
A.Asenov |
Imperial Coll. | DERA |
| EPSRC | Nanoelectronic and quantum devices and Systems (rolling grant) | £2,052,295 | 04/1994 03/1998 |
S.Beaumont
J.R.Barker A.Asenov J.Williamson C.Wilkinson C.Stanley A.Long J.Davies C.S-Torres J.Weaver |
GMMT | |
| GU Strategic
Award |
Hypermesh connected parallel computer | £84,000 | 09/1994
08/1996 |
J.R.Barker
A.Asenov |
Motorola | |
| EU ESPRIT | Project GP-MIMD (ZEUS) | ECU 11,000 | 06/1993
05/1994 |
J.R.Barker
A.Asenov |
7 European Universities | Parsytec |
| The British Council | A parallel cellular automaton simulator for ultrafast ultrasmall FETs on MIMD Machines | £ 5,980 | 09/1994
09/1996 |
J.R.Barker
A.Asenov |
TU Munich | |
| EPSRC/
DTI |
High temperature MOS-gated power semiconductors and advanced aircraft electric power conditioning systems | £345,000 | 09/1992
09/1995 |
T.Miller
A.Asenov J.R.Barker |
Lucas Electronics
GEC Plessey Semiconductors |
Academic Collaborations
- Prof. T. Whall, Prof. E. Parker, Warwick University, P-channel SiGe MOSFETs for CMOS applications
- Dr. K. Fobeletz, Imperial College, N-channel strain Si/SiGe MOSFETs for micropower applications
- Prof. A. O'Neill, Newcastle University, SiGe MOSFETs on virtual substrates for advanced CMOS applications
- Dr. A. Evans, Southampton University, Process and device simulation of SiGe CMOS technologies
- Dr. D. Webster, University College, London, Ultralinear devices and circuits
- Prof. G-L Oppo, Strathclyde University, Simulation of electronics and optoelectronics devices
- Prof. A. Evans, Loughborough University, Development of a parallel device simulator
- Prof. K. Goser, Dortmund University, Random dopant induced parameter fluctuations in aggressively scaled MOSFETs
- Prof. R. Eisenberg, Rush Medical College, Simulation of ionic transport through biological membranes
- Prof. P. Vogl, Technical University Munich, Monte Carlo simulation of III-V materials and devices
- Prof. F. Koch, Technical University Munich, Hot electron degradation in MOSFETs
Main Industrial Collaborations
- NASA Ames Research Centre, Atomistic simulation of decanano MOSFETs
- Mitel (GEC Plessey Semiconductors), Simulation of power semiconductor devices and SiGe MOSFETs for CMOS applications
- Mitel (GEC Marconi Caswell), Simulation of ultrafast semiconductor devices
- Avant! (Santa Clara, CA). Establishment of the Glasgow Device Simulation Centre, simulation of SiGe devices, support for the IGDS MSc course, $500,000 for SiGe simulation, Member of the Int. Advisory Board
- Silvaco Int. (Santa Clara, CA). Simulation of power semiconductor devices
- Daimler Chrysler (Ulm, Germany), Simulation of RF SiGe devices
- DERA, Simulation of SiGe devices
- IBM (Greenock), Simulation of new generation flat displays
- Infineon (Siemens, Munich), Hot electron degradation in scaled MOSFETs